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dc.contributor.authorKUMAR, ANKITen_US
dc.contributor.authorGHOSH, PRASENJITen_US
dc.date.accessioned2025-06-24T11:45:09Z-
dc.date.available2025-06-24T11:45:09Z-
dc.date.issued2025-02en_US
dc.identifier.citationACS Applied Energy Materials, 8(03), 1507–1517.en_US
dc.identifier.issn2574-0962en_US
dc.identifier.urihttps://doi.org/10.1021/acsaem.4c02465en_US
dc.identifier.urihttp://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/10200-
dc.description.abstractDouble half-Heusler (DHH) alloys (XY0.5Y′0.5Z) stabilized by mixing two unstable HHs (XYZ and XY′Z) have been the subject of extensive research as an alternative to HHs for high-temperature thermoelectric applications because of the former’s low lattice thermal conductivity. In this work, using a combination of density functional theory (DFT)-based calculations and semiclassical Boltzmann transport theory, we elucidate the role of hierarchical bonding, reduction of electronegativity of X, and chemical pressure induced by variation in its atomic size on the electronic properties, transport, and thermoelectric properties, of a family of DHH compounds, namely, XFe0.5Ni0.5Sb (where X = Ti, Zr, and Hf). Compared to the parent compounds, we observe a larger variation in the nature of the bonds in the DHH lattice that aids in the reduction of their lattice thermal conductivity. Our calculations show that electronegativity in the X element and chemical pressure influence the band convergence observed in the conduction band of these materials in a reverse way. While reduction of electronegativity favors band convergence, tensile strain induced in the lattice due to the larger size of X is detrimental for the same. However, electronegativity has a much stronger effect. We observe that HfFe0.5Ni0.5Sb, which shows the largest band convergence, has the highest value of zT for n-type charge carriers among the three materials considered in our work. Moreover, hole-doped (p-type) HfFe0.5Ni0.5Sb also exhibits zT > 1. Therefore, we envisage that HfFe0.5Ni0.5Sb can be a good candidate for both the n and p legs of a thermoelectric device.en_US
dc.language.isoenen_US
dc.publisherAmerican Chemical Societyen_US
dc.subjectElectrical propertiesen_US
dc.subjectElementsen_US
dc.subjectLatticesen_US
dc.subjectPhononsen_US
dc.subjectThermal conductivityen_US
dc.subject2025en_US
dc.titleElucidating the Role of Hierarchical Bonding, Electronegativity, and Chemical Pressure on the Thermoelectric Properties of Double Half Heuslersen_US
dc.typeArticleen_US
dc.contributor.departmentDept. of Physicsen_US
dc.identifier.sourcetitleACS Applied Energy Materialsen_US
dc.publication.originofpublisherForeignen_US
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