Please use this identifier to cite or link to this item: http://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/10512
Title: Dopant-Engineered Enhancement of Third-Harmonic Generation in 2D Hybrid Perovskites
Authors: TANWAR, RITEEKA
BANERJEE, SRIJITA
UDAY, NANDANA, V.
MANDAL, PANKAJ
Dept. of Chemistry
Keywords: Doping
Hybrid perovskites
Lower-dimensional materials
Nonlinear optics
Third-harmonic generation
2025-NOV-WEEK4
TOC-NOV-2025
2025
Issue Date: Oct-2025
Publisher: Wiley
Citation: Small
Abstract: Low-dimensional hybrid lead halide perovskites hold strong potential for nonlinear optical (NLO) applications due to their structural diversity, quantum and dielectric confinement, and soft lattice dynamics. Here, a substantial enhancement in third-harmonic generation (THG) efficiency of a 2D perovskite-derivative system, PEA2PbI4 (PEA = phenylethylammonium), achieved through targeted doping with Mn2+ and Sb3+ ions is demonstrated. THG measurements across a broad wavelength range (1320–1860 nm) show that doping increases THG intensity up to an optimal dopant concentration. Notably, a six fold enhancement is achieved with 1.2% Mn2+ doping. This improvement is attributed to dopant-induced mid-gap defect states and surface modifications that enhance the third-order nonlinear susceptibility (χ⁽3⁾) and modulate the laser-induced damage threshold (LIDT). Maximum THG enhancement occurs near the excitonic resonance at 482 nm. Although doped samples exhibit reduced optical stability, the THG response remains polarization-independent, indicating preserved symmetry. The comparable performance of Mn2+ (isovalent) and Sb3+ (heterovalent) dopants suggests that the enhancement is a general doping effect rather than dependent on dopant charge or spin. These findings highlight doping as an effective strategy to boost NLO efficiency in layered perovskite systems, offering a viable route for future optoelectronic and photonic device applications.
URI: https://doi.org/10.1002/smll.202508068
http://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/10512
ISSN: 1613-6810
1613-6829
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