Please use this identifier to cite or link to this item: http://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/10934
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dc.contributor.authorVEDHANTH, S V Uen_US
dc.contributor.authorBHUNIA, AMITen_US
dc.contributor.authorSINGH, MOHIT K.en_US
dc.contributor.authorCHAUDHURY, YUVRAJen_US
dc.contributor.authorHenini, Mohameden_US
dc.contributor.authorDATTA, SHOUVIKen_US
dc.date.accessioned2026-04-29T08:28:40Z
dc.date.available2026-04-29T08:28:40Z
dc.date.issued2026-04en_US
dc.identifier.citationPhysica Scriptaen_US
dc.identifier.issn1402-4896en_US
dc.identifier.urihttps://doi.org/10.1088/1402-4896/ae65dfen_US
dc.identifier.urihttp://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/10934
dc.description.abstractBias-dependent oscillations in excitonic photoluminescence are observed in a mixed-dimensional 0D–2D heterostructure. These oscillations arise from modulation by oscillatory DC photocurrent, which exhibits periodic negative differential resistance, indicating recurring charge accumulation within the heterostructure. The persistence of these oscillations across a macroscopic area of diameter ~200 μm suggests the presence of periodically correlated quantum phenomena over large length scales. Furthermore, bias-dependent oscillations in the photo-capacitance are observed, reflecting a periodic ordering and disordering of excitonic populations. Together, these observations point to a direct competition between coherent and incoherent electron tunnelling processes. The coupled oscillatory behaviour of photoluminescence, photocurrent, and photo-capacitance highlights new opportunities for exciton-based quantum optoelectronic devices.en_US
dc.language.isoenen_US
dc.publisherIOP Publishingen_US
dc.subjectPhysicsen_US
dc.subject2026-APR-WEEK4en_US
dc.subjectTOC-APR-2026en_US
dc.subject2026en_US
dc.titleVoltage-regulated photoluminescence modulation in a 0D-2D mixed dimensional heterostructureen_US
dc.typeArticleen_US
dc.contributor.departmentDept. of Physicsen_US
dc.publication.originofpublisherForeignen_US
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