Please use this identifier to cite or link to this item: http://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/1779
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dc.contributor.authorSingh, Akankshaen_US
dc.contributor.authorKULKARNI, SULABHAen_US
dc.contributor.authorKhan-Malek, Chantalen_US
dc.date.accessioned2019-02-14T05:49:50Z
dc.date.available2019-02-14T05:49:50Z
dc.date.issued2011-06en_US
dc.identifier.citationMicroelectronic Engineering, 88(6), 939-944en_US
dc.identifier.issn0167-9317en_US
dc.identifier.issn1873-5568en_US
dc.identifier.urihttp://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/1779-
dc.identifier.urihttps://doi.org/10.1016/j.mee.2010.12.026en_US
dc.description.abstractSoft lithography and self-assembly provide powerful means of organizing colloidal solution of synthesized nanoparticles (NPs) for a wide variety of application. Pattern transfer of silicon dioxide (SiO2) nanoparticles–polymethylmethacylate (PMMA) nanocomposite was investigated using two such soft lithographic techniques, micro molding in capillaries (MIMIC) and micro transfer molding (μTM) using an elastomeric stamp in Polydimethyl siloxane (PDMS). Nanocomposite periodic arrays of 20 μm wide and 10 μm deep lines with 10 μm spacing were obtained over approximately 1 cm2 area on silicon substrates by μTM and MIMIC using a 3 wt.% monodisperse silica nanoparticles (∼338 ± 2 nm) in polymethyl methacrylate (PMMA) solution. In addition, free standing nanocomposite self-standing films of centimeter size were also manufactured by μTM. Single line of nanocomposite could also be obtained using MIMIC with a lower concentration of silica NPs (0.25 wt.%) in PMMA.en_US
dc.language.isoenen_US
dc.publisherElsevier B.V.en_US
dc.subjectNanoparticlesen_US
dc.subjectPDMSen_US
dc.subjectMIMICen_US
dc.subjectμTMen_US
dc.subjectPMMAen_US
dc.subjectSoft lithographyen_US
dc.subject2011en_US
dc.titlePatterning of SiO2 nanoparticle–PMMA polymer composite microstructures based on soft lithographic techniquesen_US
dc.typeArticleen_US
dc.contributor.departmentDept. of Physicsen_US
dc.identifier.sourcetitleMicroelectronic Engineeringen_US
dc.publication.originofpublisherForeignen_US
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