Photoelectron imaging spectroscopy and theoretical investigation of ZrSi

Abstract

The photoelectron spectrum of ZrSi− has been measured at two different photon energies: 2.33 eV and 3.49 eV, providing electron binding energy and photoelectron angular distribution information. The obtained vertical detachment energy of ZrSi− is 1.584(14) eV. The neutral ground and excited state terms are assigned based on experimental and theoretical results. The ground state of ZrSi is tentatively assigned as a 3Σ+ state with a configuration of 1σ2 1π4 1δ0 2σ1 3σ1. A low lying 3Πi neutral excited state is identified to be 0.238 eV (1919 cm−1) above the ground state. The anion ground state is designated as a 2Σ+ state with a 1σ2 1π4 1δ0 2σ2 3σ1 valence electron configuration. A Franck-Condon (FC) simulation of the photoelectron spectrum has been carried out. For the 3Σ+ ← 2Σ+ band, theoretically calculated bond lengths and frequencies are used in the FC calculation which give good agreement with experiment, while for the 3Πi ← 2Σ+ band, the ZrSi bond length is estimated from the FC spectrum. Comparisons are made with previously published theoretical studies and inconsistencies are pointed out. To the best of our knowledge, this study provides the first spectroscopic information on the transition metal-silicon diatomic, ZrSi.