Please use this identifier to cite or link to this item: http://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/2637
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dc.contributor.authorSWARNKAR, ABHISHEKen_US
dc.contributor.authorMarshall, Ashley R.en_US
dc.contributor.authorSanehira, Erin M.en_US
dc.contributor.authorChernomordik, Boris D.en_US
dc.contributor.authorMoore, David T.en_US
dc.contributor.authorChristian, Jeffrey A.en_US
dc.date.accessioned2019-04-29T09:21:49Z
dc.date.available2019-04-29T09:21:49Z
dc.date.issued2016-10en_US
dc.identifier.citationScience, 354(6308), 92-95.en_US
dc.identifier.issn0036-8075en_US
dc.identifier.issn1095-9203en_US
dc.identifier.urihttp://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/2637-
dc.identifier.urihttps://doi.org/10.1126/science.aag2700en_US
dc.description.abstractWe show nanoscale phase stabilization of CsPbI3 quantum dots (QDs) to low temperatures that can be used as the active component of efficient optoelectronic devices. CsPbI3 is an all-inorganic analog to the hybrid organic cation halide perovskites, but the cubic phase of bulk CsPbI3 (α-CsPbI3)—the variant with desirable band gap—is only stable at high temperatures. We describe the formation of α-CsPbI3 QD films that are phase-stable for months in ambient air. The films exhibit long-range electronic transport and were used to fabricate colloidal perovskite QD photovoltaic cells with an open-circuit voltage of 1.23 volts and efficiency of 10.77%. These devices also function as light-emitting diodes with low turn-on voltage and tunable emission.en_US
dc.language.isoenen_US
dc.publisherAmerican Association for the Advancement of Scienceen_US
dc.subjectQuantum dot-induced phaseen_US
dc.subjectCsPbI3en_US
dc.subjectHigh-efficiency photovoltaicsen_US
dc.subject2016en_US
dc.titleQuantum dot–induced phase stabilization of α-CsPbI3 perovskite for high-efficiency photovoltaicsen_US
dc.typeArticleen_US
dc.contributor.departmentDept. of Chemistryen_US
dc.identifier.sourcetitleScienceen_US
dc.publication.originofpublisherForeignen_US
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