Please use this identifier to cite or link to this item: http://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/3279
Full metadata record
DC FieldValueLanguage
dc.contributor.authorPradhan, Narayanen_US
dc.contributor.authorAdhikari, Samrat Dasen_US
dc.contributor.authorNAG, ANGSHUMANen_US
dc.contributor.authorSarma, D. D.en_US
dc.date.accessioned2019-07-01T05:35:13Z
dc.date.available2019-07-01T05:35:13Z
dc.date.issued2017-06en_US
dc.identifier.citationAngewandte Chemie International Edition, 56(25), 14187-14191.en_US
dc.identifier.issn1433-7851en_US
dc.identifier.issn1521-3773en_US
dc.identifier.urihttp://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/3279-
dc.identifier.urihttps://doi.org/10.1002/anie.201611526en_US
dc.description.abstractIntroducing a few atoms of impurities or dopants in semiconductor nanocrystals can drastically alter the existing properties or even introduce new properties. For example, mid?gap states created by doping tremendously affect photocatalytic activities and surface controlled redox reactions, generate new emission centers, show thermometric optical switching, make FRET donors by enhancing the excited state lifetime, and also create localized surface plasmon resonance induced low energy absorption. In addition, researchers have more recently started focusing their attention on doped nanocrystals as an important and alternative material for solar energy conversion to meet the current demand for renewable energy. Moreover, the electrical and magnetic properties of the host are also strongly altered on doping. These beneficial dopant?induced changes suggest that doped nanocrystals with proper selections of dopant-host pairs may be helpful for generating designer materials for a wide range of current technological needs. How properties relate to the doping of a variety of semiconductor nanocrystals are summarized in this Review.en_US
dc.language.isoenen_US
dc.publisherWileyen_US
dc.subjectLuminescenceen_US
dc.subjectPlasmonicen_US
dc.subjectMagnetic Properties of Dopeden_US
dc.subjectSemiconductor Nanocrystalsen_US
dc.subjectManganese dopeden_US
dc.subject2017en_US
dc.titleLuminescence, Plasmonic, and Magnetic Properties of Doped Semiconductor Nanocrystalsen_US
dc.typeArticleen_US
dc.contributor.departmentDept. of Chemistryen_US
dc.identifier.sourcetitleAngewandte Chemie International Editionen_US
dc.publication.originofpublisherForeignen_US
Appears in Collections:JOURNAL ARTICLES

Files in This Item:
There are no files associated with this item.


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.