Please use this identifier to cite or link to this item: http://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/3514
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dc.contributor.authorBANSODE, UMESHen_US
dc.contributor.authorOGALE, SATISHCHANDRAen_US
dc.date.accessioned2019-07-01T05:54:54Z
dc.date.available2019-07-01T05:54:54Z
dc.date.issued2017-04en_US
dc.identifier.citationJournal of Applied Physics, 121(13), 133107.en_US
dc.identifier.issn0021-8979en_US
dc.identifier.issn1089-7550en_US
dc.identifier.urihttp://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/3514-
dc.identifier.urihttps://doi.org/10.1063/1.4979865en_US
dc.description.abstractHigh quality hybrid perovskite films are grown by the pulsed laser deposition (PLD) process through target stoichiometry and gas ambient control in the commonly used on-axis geometry which is compatible with PLD of other materials such as metal oxides. The use of an off-stoichiometric target and a momentum softening gas mixture of argon and hydrogen (90%:10%) is shown to yield dense films in the on-axis geometry with excellent stoichiometry and optical quality. The band gap can be easily tuned from 1.6 to 2.3 eV with either mixed halide composite target or successive depositions of inter-diffusing MAPbBr3 and MAPbI3 layers. A photosensor based on PLD grown MAPbI3 is shown to render impressive performance over the broad range of wavelengths from 375 to 800 nm at a voltage of 5 V bias. A planar heterojunction solar cell based on the dry-processed on-axis PLD grown film exhibits a champion conversion efficiency of 10.9%. A heterostructure comprising in situ pulsed laser deposited Cu2O (p-type) followed by the hybrid perovskite film shows a rectifying characteristic and photoresponse.en_US
dc.language.isoenen_US
dc.publisherAIP Publishingen_US
dc.subjectOn-axis pulseden_US
dc.subjectlaser depositionen_US
dc.subjectHybrid perovskiteen_US
dc.subjectBroadbanden_US
dc.subjectPhoto-sensor applicationsen_US
dc.subject2017en_US
dc.titleOn-axis pulsed laser deposition of hybrid perovskite films for solar cell and broadband photo-sensor applicationsen_US
dc.typeArticleen_US
dc.contributor.departmentDept. of Physicsen_US
dc.identifier.sourcetitleJournal of Applied Physicsen_US
dc.publication.originofpublisherForeignen_US
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