Please use this identifier to cite or link to this item: http://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/3979
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dc.contributor.authorPatil, Sumatien_US
dc.contributor.authorDatar, Suwarnaen_US
dc.contributor.authorDHARMADHIKARI, CHANDRAKANT V.en_US
dc.date.accessioned2019-09-09T11:36:14Z
dc.date.available2019-09-09T11:36:14Z
dc.date.issued2018-03en_US
dc.identifier.citationJournal of Nanoscience and Nanotechnology, 18(3), 1626-1635.en_US
dc.identifier.issn1533-4880en_US
dc.identifier.issn1533-4899en_US
dc.identifier.urihttp://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/3979-
dc.identifier.urihttps://doi.org/10.1166/jnn.2018.14257en_US
dc.description.abstractScanning tunneling spectroscopy (STS) is used for investigating variations in electronic properties of gold nanoparticles (AuNPs) and its composite with urethane-methacrylate comb polymer (UMCP) as function of temperature. Films are prepared by drop casting AuNPs and UMCP in desired manner on silicon substrates. Samples are further analyzed for morphology under scanning electron microscopy (SEM) and atomic force microscopy (AFM). STS measurements performed in temperature range of 33 °C to 142 °C show systematic variation in current versus voltage (I–V) curves, exhibiting semiconducting to metallic transition/Schottky behavior for different samples, depending upon preparation method and as function of temperature. During current versus time (I–t) measurement for AuNPs, random telegraphic noise is observed at room temperature. Random switching of tunneling current between two discrete levels is observed for this sample. Power spectra derived from I–t show 1/f 2 dependence. Statistical analysis of fluctuations shows exponential behavior with time width τ ≈ 7 ms. Local density of states (LDOS) plots derived from I–V curves of each sample show systematic shift in valance/conduction band edge towards/away from Fermi level, with respect to increase in temperature. Schottky emission is best fitted electron emission mechanism for all samples over certain range of bias voltage. Schottky plots are used to calculate barrier heights and temperature dependent measurements helped in measuring activation energies for electron transport in all samples.en_US
dc.language.isoenen_US
dc.publisherAmerican Scientific Publishersen_US
dc.subjectCharge Transporten_US
dc.subjectLocal Density of Statesen_US
dc.subjectNanoparticlesen_US
dc.subjectScanningen_US
dc.subjectTunneling Spectroscopyen_US
dc.subject2018en_US
dc.titleTemperature Dependent Electron Transport Properties of Gold Nanoparticles and Composites: Scanning Tunneling Spectroscopy Investigationsen_US
dc.typeArticleen_US
dc.contributor.departmentDept. of Physicsen_US
dc.identifier.sourcetitleJournal of Nanoscience and Nanotechnologyen_US
dc.publication.originofpublisherForeignen_US
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