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DC Field | Value | Language |
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dc.contributor.author | Patil, Sumati | en_US |
dc.contributor.author | Datar, Suwarna | en_US |
dc.contributor.author | DHARMADHIKARI, CHANDRAKANT V. | en_US |
dc.date.accessioned | 2019-09-09T11:36:14Z | |
dc.date.available | 2019-09-09T11:36:14Z | |
dc.date.issued | 2018-03 | en_US |
dc.identifier.citation | Journal of Nanoscience and Nanotechnology, 18(3), 1626-1635. | en_US |
dc.identifier.issn | 1533-4880 | en_US |
dc.identifier.issn | 1533-4899 | en_US |
dc.identifier.uri | http://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/3979 | - |
dc.identifier.uri | https://doi.org/10.1166/jnn.2018.14257 | en_US |
dc.description.abstract | Scanning tunneling spectroscopy (STS) is used for investigating variations in electronic properties of gold nanoparticles (AuNPs) and its composite with urethane-methacrylate comb polymer (UMCP) as function of temperature. Films are prepared by drop casting AuNPs and UMCP in desired manner on silicon substrates. Samples are further analyzed for morphology under scanning electron microscopy (SEM) and atomic force microscopy (AFM). STS measurements performed in temperature range of 33 °C to 142 °C show systematic variation in current versus voltage (I–V) curves, exhibiting semiconducting to metallic transition/Schottky behavior for different samples, depending upon preparation method and as function of temperature. During current versus time (I–t) measurement for AuNPs, random telegraphic noise is observed at room temperature. Random switching of tunneling current between two discrete levels is observed for this sample. Power spectra derived from I–t show 1/f 2 dependence. Statistical analysis of fluctuations shows exponential behavior with time width τ ≈ 7 ms. Local density of states (LDOS) plots derived from I–V curves of each sample show systematic shift in valance/conduction band edge towards/away from Fermi level, with respect to increase in temperature. Schottky emission is best fitted electron emission mechanism for all samples over certain range of bias voltage. Schottky plots are used to calculate barrier heights and temperature dependent measurements helped in measuring activation energies for electron transport in all samples. | en_US |
dc.language.iso | en | en_US |
dc.publisher | American Scientific Publishers | en_US |
dc.subject | Charge Transport | en_US |
dc.subject | Local Density of States | en_US |
dc.subject | Nanoparticles | en_US |
dc.subject | Scanning | en_US |
dc.subject | Tunneling Spectroscopy | en_US |
dc.subject | 2018 | en_US |
dc.title | Temperature Dependent Electron Transport Properties of Gold Nanoparticles and Composites: Scanning Tunneling Spectroscopy Investigations | en_US |
dc.type | Article | en_US |
dc.contributor.department | Dept. of Physics | en_US |
dc.identifier.sourcetitle | Journal of Nanoscience and Nanotechnology | en_US |
dc.publication.originofpublisher | Foreign | en_US |
Appears in Collections: | JOURNAL ARTICLES |
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