Please use this identifier to cite or link to this item: http://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/3980
Title: Investigation of Disorder in Mixed Phase, sp 2–sp 3 Bonded Graphene-Like Nanocarbon
Authors: DHARMADHIKARI, CHANDRAKANT V.
Patil, Sumati
Dept. of Physics
Keywords: Field Emission Microscopy
Graphene-Like Nanocarbon
Scanning Tunneling Microscopy
Scanning Tunneling Spectroscopy
2018
Issue Date: Apr-2018
Publisher: American Scientific Publishers
Citation: Journal of Nanoscience and Nanotechnology, 18(3), 1626-1635.
Abstract: Disorder in a mixed phase, sp 2–sp 3 bonded graphene-like nanocarbon (GNC) lattice has been extensively studied for its electronic and field emission properties. Morphological investigations are performed using scanning electron microscopy (SEM) which depicts microstructures comprising of atomically flat terraces (c-planes) with an abundance of edges (ab planes which are orthogonal to c-planes). Scanning tunneling microscopy (STM) is used to observe the atomic structure of basal planes whereas field emission microscopy (FEM) is found to be suitable for resolving nanotopography of edges. STM images revealed the hexagonal and non-hexagonal atomic arrangements in addition to a variety of defect structures. Scanning tunneling spectroscopy is carried out to study the effect of this short-range disorder on the local density of states. Current versus voltage (I–V) characteristics have been recorded at different defect sites and are compared with respect to the extent of the defect. As sharp edges of GNC are expected to be excellent field emitters, because of low work function and high electric field, enhancement in current is observed particularly when applied electric field is along basal planes. Therefore, it is worthwhile to investigate field emission from these samples. The FEM images show a cluster of bright spots at low voltages which later transformed into an array resembling ledges of ab-planes with increasing voltage. Reproducible I–V curves yield linear Fowler-Nordheim plots supporting field emission as the dominant mechanism of electron emission. Turn on field for 10 μA current is estimated to be ~3 V/μm.
URI: http://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/3980
https://doi.org/10.1166/jnn.2018.14312
ISSN: 1533-4880
1533-4899
Appears in Collections:JOURNAL ARTICLES

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