Please use this identifier to cite or link to this item: http://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/4245
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dc.contributor.authorSAPPATI, SUBRAHMANYAMen_US
dc.contributor.authorGeorge, Leenaen_US
dc.contributor.authorSwamy,Vincent Paulen_US
dc.contributor.authorDevi, R. Nandinien_US
dc.contributor.authorGHOSH, PRASENJITen_US
dc.date.accessioned2019-12-24T11:53:47Z
dc.date.available2019-12-24T11:53:47Z
dc.date.issued2019-12en_US
dc.identifier.citationChemcatchem, 11(24), 6460-6466.en_US
dc.identifier.issn1867-3880en_US
dc.identifier.issn1867-3899en_US
dc.identifier.urihttp://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/4245-
dc.identifier.urihttps://doi.org/10.1002/cctc.201901924en_US
dc.description.abstractDiscovering efficient photocatalysts for hydrogen production from water splitting is highly desirable. Computational studies can help in rational designing of such catalysts through high throughput screening of materials. However, for that purpose one needs to identify descriptors that not only connects material properties with their functionality but are easy and inexpensive to compute. Using a combination of density functional theory based calculations and experiments we show two descriptors, namely, charge injection efficiency and electron hole separation, that can be used for in silico design of new and efficient dye‐sensitized‐semiconductor composites as catalysts for hydrogen evolution reaction.en_US
dc.language.isoenen_US
dc.publisherWileyen_US
dc.subjectDescriptoren_US
dc.subjectElectron-hole separationen_US
dc.subjectCharge injectionen_US
dc.subjectDye-sensitized semiconductorsen_US
dc.subjectH-2 evolutionen_US
dc.subjectTOC-DEC-2019en_US
dc.subject2019en_US
dc.titleDescriptors to Predict Dye-Sensitized Semiconductor Based Photocatalyst for Hydrogen Evolution Reactionen_US
dc.typeArticleen_US
dc.contributor.departmentDept. of Chemistryen_US
dc.contributor.departmentDept. of Physicsen_US
dc.identifier.sourcetitleChemcatchemen_US
dc.publication.originofpublisherForeignen_US
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