Please use this identifier to cite or link to this item: http://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/4288
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dc.contributor.authorNARAYANAN, VRINDAen_US
dc.contributor.authorM A , GOKULen_US
dc.contributor.authorRAHMAN, ATIKURen_US
dc.date.accessioned2019-12-24T12:19:31Z
dc.date.available2019-12-24T12:19:31Z
dc.date.issued2019-12en_US
dc.identifier.citationMaterials Research Express, 6(12).en_US
dc.identifier.issn2053-1591en_US
dc.identifier.urihttp://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/4288-
dc.identifier.urihttps://doi.org/10.1088/2053-1591/ab5383en_US
dc.description.abstractIn recent years 2D materials like monolayer of transition metal dichalcogenides (TMDs) have caught enormous interest due to their potential applications in electronic, optoelectronic, spintronic, valleytronic and twistronic devices. To grow large-area monolayer of these materials, chemical vapor deposition (CVD) is one of the most widely used techniques. But the size and quality of the samples are critically dependent on the various growth conditions. As a result, the CVD parameters vary from lab to lab and often it is difficult to find a stable and reproducible growth condition. Here we have demonstrated a methodology for the quick and easy optimization of various growth parameters of 2D materials using CVD. We have taken MoS2 as a model 2D system and discussed the way to achieve an optimum recipe for the growth of large-area monolayer reproducibly. We have done thorough electrical and optoelectrical characterization to show the device performance of the samples grown in various conditions. The methodology will help to optimize the growth condition of any other 2D materials easily and quickly.en_US
dc.language.isoenen_US
dc.publisherIOP Publishingen_US
dc.subjectField-Effect Transistorsen_US
dc.subjectMos2 Atomic Layersen_US
dc.subjectGrain-Boundariesen_US
dc.subjectEpitaxial-Growthen_US
dc.subjectPhase Growthen_US
dc.subjectMonolayeren_US
dc.subjectParametersen_US
dc.subjectTOC-DEC-2019en_US
dc.subject2019en_US
dc.titleHow to 'train' your CVD to grow large-area 2D materialsen_US
dc.typeArticleen_US
dc.contributor.departmentDept. of Physicsen_US
dc.identifier.sourcetitleMaterials Research Expressen_US
dc.publication.originofpublisherForeignen_US
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