Please use this identifier to cite or link to this item: http://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/4547
Title: Pressure-induced phase transitions in the topological crystalline insulator SnTe and its comparison with semiconducting SnSe: Raman and first-principles studies
Authors: Pal, Sukanya
Arora, Raagya
Roychowdhury, Subhajit
HARNAGEA, LUMINITA
SAURABH, KUMAR
Shenoy, Sandhya
Muthu, D. V. S.
Biswas, Kanishka
Waghmare, U. V.
Sood, A. K.
Dept. of Physics
Keywords: Physics
TOC-APR-2020
2020
2020-APR-WEEK3
Issue Date: Apr-2020
Publisher: American Physical Society
Citation: Physical Review B, 101(15).
Abstract: SnTe is a narrow band-gap topological crystalline insulator (TCI), whereas SnSe is a normal semiconductor. We report Raman study of SnTe and SnSe as a function of pressure at room temperature along with first-principles density functional theory calculations. Under pressure, isostructural transition is observed in SnTe, as revealed by the anomalous softening of the strongest Raman mode up to 1.5 GPa, accompanied by an increase in the linewidth. Our first-principles calculations show that the mirror Chern number of SnTe does not change and the TCI phase remains unaffected by pressure. Raman signatures of its phase transition at 1.5 GPa are associated with phonon instability at the Γ point and inversion of the lowest-energy conduction bands. An anomaly in the electron-phonon coupling results in anomalous behavior of the Raman modes at this pressure. Further, SnTe undergoes structural transitions at ∼ 5.8 , ∼ 12 , and ∼ 18.3 GPa . The 5.8-GPa transition is associated with a structural transition from the ambient cubic ( F m ¯ 3 m ) to orthorhombic (Pnma) phase, which is no longer a topological insulator, resulting in a topological phase transition. Above the transition pressure of 12 GPa, another orthorhombic Pnma[GeS] phase is stabilized, coexisting with the Pnma phase. The reduction in the number of observed Raman modes above ∼ 18.3 GPa and enthalpy calculations show a transition from orthorhombic (Pnma) to a more symmetric cubic ( Pm ¯ 3 m ) structure. Our high-pressure study of SnSe, on the other hand, reveals that it undergoes two phase transitions: one from the orthorhombic (Pnma) structure to the orthorhombic (Cmcm) structure at ∼ 6.2 GPa and the other at ∼ 12.9 GPa , in which the Cmcm phase undergoes a semimetal to metal transition. Density functional theory calculations capture the contrast in the pressure-dependent behavior of the topological crystalline insulator SnTe and the normal semiconductor SnSe.
URI: http://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/4547
https://doi.org/10.1103/PhysRevB.101.155202
ISSN: 2469-9950
2469-9969
Appears in Collections:JOURNAL ARTICLES

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