Please use this identifier to cite or link to this item: http://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/5257
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dc.contributor.authorMallows, Johnen_US
dc.contributor.authorPlanells, Miguelen_US
dc.contributor.authorThakare, Vishalen_US
dc.contributor.authorBhosale, Reshmaen_US
dc.contributor.authorOGALE, SATISHCHANDRAen_US
dc.contributor.authorRobertson, Neilen_US
dc.date.accessioned2020-10-26T06:38:01Z-
dc.date.available2020-10-26T06:38:01Z-
dc.date.issued2015-12en_US
dc.identifier.citationACS Applied Materials & Interfaces, 7(50), 27597-27601.en_US
dc.identifier.issn1944-8244en_US
dc.identifier.issn1944-8252en_US
dc.identifier.urihttp://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/5257-
dc.identifier.urihttps://doi.org/10.1021/acsami.5b09291en_US
dc.description.abstractA novel hybrid visible-light photodetector was created using a planar p-type inorganic NiO layer in a junction with an organic electron acceptor layer. The effect of different oxygen pressures on formation of the NiO layer by pulsed laser deposition shows that higher pressure increases the charge carrier density of the film and lowers the dark current in the device. The addition of a monolayer of small molecules containing conjugated π systems and carboxyl groups at the device interface was also investigated and with correct alignment of the energy levels improves the device performance with respect to the quantum efficiency, responsivity, and photogeneration. The thickness of the organic layer was also optimized for the device, giving a responsivity of 1.54 × 10–2 A W–1 in 460 nm light.en_US
dc.language.isoenen_US
dc.publisherAmerican Chemical Societyen_US
dc.subjectPhotodetectoren_US
dc.subjectNickel oxideen_US
dc.subjectOrganicen_US
dc.subjectSurface modifieren_US
dc.subjectOxygen vacanciesen_US
dc.subjectPulsed laser depositionen_US
dc.subject2015en_US
dc.titlep-Type NiO Hybrid Visible Photodetectoren_US
dc.typeArticleen_US
dc.contributor.departmentDept. of Physicsen_US
dc.identifier.sourcetitleACS Applied Materials & Interfacesen_US
dc.publication.originofpublisherForeignen_US
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