Please use this identifier to cite or link to this item: http://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/5463
Title: Crystal growth and characterization of CaTe: A potential topological material
Authors: HARNAGEA, LUMINITA
SAURABH, KUMAR
TELANG, PRACHI
Dept. of Physics
Keywords: A2 Flux single crystal growth
B1 CaTe
B1 Metal Chalcogenide
2021
2020-DEC-WEEK5
TOC-DEC-2020
Issue Date: Feb-2021
Publisher: Elsevier B.V.
Citation: Journal of Crystal Growth, 556, 125988.
Abstract: High-quality single crystals of CaTe are grown using the high temperature solution-growth method employing Te as the flux. The grown crystals were characterized using single crystal and powder X-ray diffraction, X-ray Laue diffraction, scanning electron microscope and the energy dispersive X-rays analysis for composition mapping. CaTe is an insulator, crystalizing with a cubic NaCl-type of structure. The low-temperature specific heat of CaTe exhibits a peak in versus temperature T plot near T = 20 K with a conspicuous absence of the Debye regime down to T = 2 K.
URI: http://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/5463
https://doi.org/10.1016/j.jcrysgro.2020.125988
ISSN: 0022-0248
Appears in Collections:JOURNAL ARTICLES

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