Please use this identifier to cite or link to this item: http://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/5670
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dc.contributor.authorMANDAL, TARAK NATHen_US
dc.contributor.authorJana, Atanuen_US
dc.date.accessioned2021-03-02T05:57:41Z-
dc.date.available2021-03-02T05:57:41Z-
dc.date.issued2020-09en_US
dc.identifier.citationMatter, 3(3), 617-619.en_US
dc.identifier.issn2590-2385en_US
dc.identifier.urihttp://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/5670-
dc.identifier.urihttps://doi.org/10.1016/j.matt.2020.06.027en_US
dc.description.abstractSolution-processed lateral epitaxial growth of two-dimensional (2D) halide perovskite heterostructures, multiheterostructures, and superlattices is a daunting task because of their soft fragile ionic bonding and high intrinsic ion mobility of halide ions. Recently, these structures have been successfully developed for Pb2+- and Sn2+-based 2D halide perovskites using various large organic molecules, and its potential energy application has been shown in thin-film electrical diodes.en_US
dc.language.isoenen_US
dc.publisherElsevier B.V.en_US
dc.subjectChemistryen_US
dc.subject2020en_US
dc.titleLateral Epitaxial Heterostructures of Halide Perovskites for Diode Applicationen_US
dc.typeEditorial Materialen_US
dc.contributor.departmentDept. of Chemistryen_US
dc.identifier.sourcetitleMatteren_US
dc.publication.originofpublisherForeignen_US
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