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dc.contributor.authorGadde, Janardhan Raoen_US
dc.contributor.authorKARMAKAR, ANASUYA et al.en_US
dc.date.accessioned2021-06-11T04:37:27Z
dc.date.available2021-06-11T04:37:27Z
dc.date.issued2021-05en_US
dc.identifier.citationPhysical Review Materials, 5(5), 054006.en_US
dc.identifier.issn2475-9953en_US
dc.identifier.urihttp://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/5929
dc.identifier.urihttps://doi.org/10.1103/PhysRevMaterials.5.054006en_US
dc.description.abstractOver the last few years, ReS2 has generated a myriad of unattended queries regarding its structure, the concomitant thickness-dependent electronic properties, and its apparently contrasting experimental optical response. In this paper, with elaborate first-principles investigations, using density functional theory (DFT) and time-dependent DFT, we identify the structure of ReS2, which is capable of reproducing and analyzing the layer-dependent optical response. The theoretical results are further validated by an in-depth structural, chemical, optical, and optoelectronic analysis of the large-area ReS2 thin films, grown by the chemical vapor deposition (CVD) process. Micro-Raman, x-ray photoelectron spectroscopy, cross-sectional transmission electron microscopy, and energy-dispersive x-ray analysis have enabled the optimization of the uniform growth of the CVD films. The correlation between the optical and electronic properties was established by static photoluminescence and excited state transient absorption measurements. Sulfur vacancy-induced localized mid-gap states render a significantly long lifetime of the excitons in these films. The ionic gel top-gated photodetectors, fabricated from the as-prepared CVD films, exhibit a large photo-response of similar to 5 A/W and a remarkable detectivity of similar to 10(11) Jones. The outcome of this paper will be useful in promoting the application of vertically grown large-area films in the field of optics and opto-electronics.en_US
dc.language.isoenen_US
dc.publisherAmerican Physical Societyen_US
dc.subjectField-Effect Transistorsen_US
dc.subjectChemical-Vapor-Depositionen_US
dc.subjectLarge-Areaen_US
dc.subjectCrystal-Structureen_US
dc.subjectRheniumen_US
dc.subjectTransitionsen_US
dc.subjectDependenceen_US
dc.subjectTechnetiumen_US
dc.subjectEfficienten_US
dc.subjectExcitonsen_US
dc.subject2021-JUN-WEEK2en_US
dc.subjectTOC-JUN-2021en_US
dc.subject2021en_US
dc.titleTwo-dimensional ReS2: Solution to the unresolved queries on its structure and inter-layer coupling leading to potential optical applicationsen_US
dc.typeArticleen_US
dc.contributor.departmentDept. of Physicsen_US
dc.identifier.sourcetitlePhysical Review Materialsen_US
dc.publication.originofpublisherForeignen_US
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