Please use this identifier to cite or link to this item: http://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/6605
Title: Role of spin-phonon and electron-phonon interactions in the phonon renormalization of (Eu1−xBix)2Ir2O7 across the metal-insulator phase transition: Temperature-dependent Raman and x-ray studies
Authors: Thomas, Anoop
TELANG, PRACHI
MISHRA, KSHITI
Cesnek, Martin
Bednarcik, Jozef
Muthu, D. V. S.
SINGH, SURJEET
Sood, A. K.
Dept. of Physics
Keywords: Physics
2022-FEB-WEEK3
TOC-FEB-2022
2022
Issue Date: Feb-2022
Publisher: American Physical Society
Citation: Physical Review B, 105(7), 075145.
Abstract: We report temperature-dependent Raman scattering and x-ray diffraction studies of pyrochlore iridates ( Eu 1 − x Bi x)2Ir2O7, for x=0, 0.02, 0.035, 0.05, and 0.1. The temperature variation in Raman experiments spans from 4 to 300 K, covering the metal-insulator phase transition accompanied by paramagnetic–to–all-in/all-out (AIAO) spin ordering (TN). These systems also show a Weyl semimetal (WSM) phase at low temperatures (<∼50K). The Ir-O-Ir bond bending mode A1g (510 cm−1) shows anomalous softening (for x=0.0, 0.02, 0.035, and 0.05) in the magnetically ordered AIAO state, arising primarily from the spin-phonon interaction due to the phonon modulation of the Dzyaloshinskii-Moriya spin-exchange interaction. The two stretching modes T 12g (307 cm−1) and T 22g (382 cm−1) harden significantly in the magnetic insulating phase. The T 2g phonons (for x=0.0, 0.02, 0.035, and 0.05) also show anomalous temperature dependence of their mode frequencies above TN due to strong electron-phonon coupling. The signatures of the WSM state are observed clearly in phonon renormalization <50 K(in x=0.02) due to strong electron-phonon interaction. Our experimental results establish strong magneto-elastic coupling below TN and significant electron-phonon interactions in the metallic phase above TN as well as in the low-temperature WSM state.
URI: https://doi.org/10.1103/PhysRevB.105.075145
http://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/6605
ISSN: 2469-9969
2469-9950
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