Please use this identifier to cite or link to this item: http://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/7433
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dc.contributor.authorBHAND, SUJITen_US
dc.contributor.authorJHA, PLAWAN KUMARen_US
dc.contributor.authorBALLAV, NIRMALYAen_US
dc.date.accessioned2022-10-31T11:06:53Z-
dc.date.available2022-10-31T11:06:53Z-
dc.date.issued2022-10en_US
dc.identifier.citationRSC Advances, 12(46), 30041-30044.en_US
dc.identifier.issn2046-2069en_US
dc.identifier.urihttps://doi.org/10.1039/D2RA05375Fen_US
dc.identifier.urihttp://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/7433-
dc.description.abstractReduced graphene oxide (rGO) has emerged as an excellent interfacial material for improvising the performance of dye-sensitized solar cells (DSSC). Herein, we have applied rGO as interfacial layers between a fluorine doped tin oxide (FTO) coated glass substrate and semiconducting material TiO2 in a photoanode of a DSSC which showed an unusual enhancement in generating a photocurrent in comparison to the control (without rGO layers). An electrochemical impedance spectroscopy (EIS) study was performed to gain the mechanistic insights into such a remarkable enhancement of photoelectric conversion efficiency (PCE) which revealed improved charge transfer and suppressed charge recombination due to high-electrical conductivity and probably more negative work function of our rGO material compared to the bare TiO2 photoanode.en_US
dc.language.isoenen_US
dc.publisherRoyal Society of Chemistryen_US
dc.subjectSensitized solar-cellsen_US
dc.subjectTICL4 treatmenten_US
dc.subjectCounter electrodeen_US
dc.subjectCarbon nanotubesen_US
dc.subjectLow-costen_US
dc.subjectTIO2en_US
dc.subjectPerformanceen_US
dc.subject2022-OCT-WEEK4en_US
dc.subjectTOC-OCT-2022en_US
dc.subject2022en_US
dc.titleUnusual enhancement in efficiency of DSSCs upon modifying photoanodes with reduced graphene oxideen_US
dc.typeArticleen_US
dc.contributor.departmentDept. of Chemistryen_US
dc.identifier.sourcetitleRSC Advancesen_US
dc.publication.originofpublisherForeignen_US
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