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DC Field | Value | Language |
---|---|---|
dc.contributor.author | SINDHU, POOJA | en_US |
dc.contributor.author | BALLAV, NIRMALYA | en_US |
dc.date.accessioned | 2023-07-21T10:38:05Z | |
dc.date.available | 2023-07-21T10:38:05Z | |
dc.date.issued | 2023-07 | en_US |
dc.identifier.citation | Inorganic Chemistry, 62(28), 10887–10891. | en_US |
dc.identifier.issn | 0020-1669 | en_US |
dc.identifier.issn | 1520-510X | en_US |
dc.identifier.uri | https://doi.org/10.1021/acs.inorgchem.3c01489 | en_US |
dc.identifier.uri | http://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/8078 | |
dc.description.abstract | Depositing thin films of pristine metal–organic framework (MOF) on top of a lattice-matched and molecularly doped MOF could provide a new path for generating electronic heterostructures of MOFs with well-defined interfaces. Herein, the Cu3BTC2 (top-layer)/TCNQ@Cu3BTC2 (bottom-layer) system is fabricated by sequential deposition on a functionalized Au substrate, and clear-cut rectification of electrical current across the thin film was observed at room-temperature. Interestingly, the electrical current rectification ratio (RR) was found to be significantly influenced by the effect of temperature (400 K), resulting in a remarkable figure in the domain of MOFs. | en_US |
dc.language.iso | en | en_US |
dc.publisher | American Chemical Society | en_US |
dc.subject | Doping | en_US |
dc.subject | Electrical conductivity | en_US |
dc.subject | Layers | en_US |
dc.subject | Metal organic frameworks | en_US |
dc.subject | Thin films | en_US |
dc.subject | 2023-JUL-WEEK2 | en_US |
dc.subject | TOC-JUL-2023 | en_US |
dc.subject | 2023 | en_US |
dc.title | Thin Films of MOF-on-Guest@MOF: A Simple Strategy of Designing Electronic Heterostructures | en_US |
dc.type | Article | en_US |
dc.contributor.department | Dept. of Chemistry | en_US |
dc.identifier.sourcetitle | Inorganic Chemistry | en_US |
dc.publication.originofpublisher | Foreign | en_US |
Appears in Collections: | JOURNAL ARTICLES |
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