Please use this identifier to cite or link to this item: http://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/8362
Title: Robust Spin Liquidity in 2D Metal-Organic Framework Cu3 (HHTP)2 with S=1/2 Kagome Lattice
Authors: NINAWE, PRANAY
Jain, Anil
Sangole, Mayur
Anas, Mohd
UGALE, AJAY
Malik, Vivek K.
Yusuf, Seikh M.
Singh, Kirandeep
BALLAV, NIRMALYA
Dept. of Chemistry
Keywords: Spin Liquid
2D Metal-organic Framework
Spin- frustration
Electron doping
Reduced graphene oxide
2023-DEC-WEEK1
TOC-DEC-2023
2024
Issue Date: Jan-2024
Publisher: Wiley
Citation: Chemistry- A European Journal, 30(04).
Abstract: On one hand electron or hole doping of quantum spin liquid (QSL) may unlock high-temperature superconductivity and on the other hand it can disrupt the spin liquidity, giving rise to a magnetically ordered ground state. Recently, a 2D MOF, Cu3(HHTP)2 (HHTP - 2,3,6,7,10,11-hexahydroxytriphenylene), containing Cu(II) S=urn:x-wiley:09476539:media:chem202303718:chem202303718-math-0001 frustrated spins in the Kagome lattice is emerging as a promising QSL candidate. Herein, we present an elegant in situ redox-chemistry strategy of anchoring Cu3(HHTP)2 crystallites onto diamagnetic reduced graphene oxide (rGO) sheets, resulting in the formation of electron-doped Cu3(HHTP)2-rGO composite which exhibited a characteristic semiconducting behavior (5 K to 300 K) with high electrical conductivity of 70 S ⋅ m−1 and a carrier density of ~1.1×1018 cm−3 at 300 K. Remarkably, no magnetic transition in the Cu3(HHTP)2-rGO composite was observed down to 1.5 K endorsing the robust spin liquidity of the 2D MOF Cu3(HHTP)2. Specific heat capacity measurements led to the estimation of the residual entropy values of 28 % and 34 % of the theoretically expected value for the pristine Cu3(HHTP)2 and Cu3(HHTP)2-rGO composite, establishing the presence of strong quantum fluctuations down to 1.5 K (two times smaller than the value of the exchange interaction J).
URI: https://doi.org/10.1002/chem.202303718
http://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/8362
ISSN: 1521-3765
0947-6539
Appears in Collections:JOURNAL ARTICLES

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