Please use this identifier to cite or link to this item: http://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/8406
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dc.contributor.authorSINDHU, POOJAen_US
dc.contributor.authorSAHA, SAUVIKen_US
dc.contributor.authorBHOI, UMASHISen_US
dc.contributor.authorBALLAV, NIRMALYAen_US
dc.date.accessioned2024-01-24T04:25:48Z
dc.date.available2024-01-24T04:25:48Z
dc.date.issued2024-01en_US
dc.identifier.citationAdvanced Functional Materials.en_US
dc.identifier.issn1616-3028en_US
dc.identifier.issn1616-301Xen_US
dc.identifier.urihttps://doi.org/10.1002/adfm.202312515en_US
dc.identifier.urihttp://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/8406
dc.description.abstractA diverse range of physicochemical properties offered by metal-organic frameworks (MOFs) is highly engaging in thin film configurations, specifically for device applications. Heterostructured thin films of MOFs allow to utilize the unique interfaces that develop within such configurations. Typically, interface is monostable and electrical transport across heterostructured MOF thin films has so far been realized to be either Ohmic or rectifying (p-n junction) type. This work reports the emergence of a bistable interface in a heterostructured thin film of Mott-like electrically insulating MOFs whereby rectifying to nonrectifying current can be reversibly switched by applying thermal energy. The inherent resistive switching behavior of both the individual MOF layers at different temperatures coupled with charge-transfer apparently makes the interface complex.en_US
dc.language.isoenen_US
dc.publisherWileyen_US
dc.subjectHeterostructureen_US
dc.subjectInterfaceen_US
dc.subjectMetal-organic frameworken_US
dc.subjectResistive switchingen_US
dc.subjectThin filmen_US
dc.subject2024-JAN-WEEK1en_US
dc.subjectTOC-JAN-2024en_US
dc.subject2024en_US
dc.titleBistable Interface: Reversible Switching of Rectifying to Nonrectifying Current Across Heterostructured Thin Films of MOFsen_US
dc.typeArticleen_US
dc.contributor.departmentDept. of Chemistryen_US
dc.identifier.sourcetitleAdvanced Functional Materialsen_US
dc.publication.originofpublisherForeignen_US
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