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DC Field | Value | Language |
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dc.contributor.author | Mutadak, Pallavi R. | en_US |
dc.contributor.author | WARULE, SAMBHAJI S. | en_US |
dc.contributor.author | Kolhe, Pankaj S. | en_US |
dc.contributor.author | Bankar, Prashant K. | en_US |
dc.contributor.author | More, Mahendra A | en_US |
dc.date.accessioned | 2024-02-05T07:27:42Z | - |
dc.date.available | 2024-02-05T07:27:42Z | - |
dc.date.issued | 2023-10 | en_US |
dc.identifier.citation | Surfaces and Interfaces, 41, 103251. | en_US |
dc.identifier.issn | 2468-0230 | en_US |
dc.identifier.uri | https://doi.org/10.1016/j.surfin.2023.103251 | en_US |
dc.identifier.uri | http://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/8471 | - |
dc.description.abstract | The practice of heteroatom doping has been proven to significantly enhance the intrinsic properties of host materials. A facile, one-step process due to the thermal reduction of ammonium hydroxide-treated graphene oxide (GO) was employed to yield nitrogen (N) doped reduced graphene oxide (rGO). In-depth characterization has been performed to reveal the phase, structure, morphology, and electronic properties of as-synthesized products. It is observed that the processing temperature noticeably affects the concentration and type of doped N species. The N-doped rGO (N-rGO) prepared at 900 ℃ exhibited excellent field electron emission (FEE) performance with relatively lower values of turn-on and threshold fields ∼ 1.28 and 1.52 V/µm, defined at emission current densities of 10 and 100 µA/cm2, respectively. Furthermore, a high current density of 5.83 mA/cm2 was drawn at an applied field of 2.51 V/µm, and the emitter showed equitably current stability tested at 10 µA. The obtained results promote the N-rGO emitter, with tuned concentrations of doped N-species, as a promising candidate for practical applications in various vacuum microelectronic devices. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Elsevier B.V. | en_US |
dc.subject | Field electron emission | en_US |
dc.subject | Work function | en_US |
dc.subject | Reduced graphene oxide | en_US |
dc.subject | Nitrogen doping | en_US |
dc.subject | Graphitic-N bonding | en_US |
dc.subject | 2023 | en_US |
dc.title | Nitrogen doped reduced graphene oxide: Investigations on electronic properties using X-ray and Ultra-violet photoelectron spectroscopy and field electron emission behaviour | en_US |
dc.type | Article | en_US |
dc.contributor.department | Dept. of Chemistry | en_US |
dc.identifier.sourcetitle | Surfaces and Interfaces | en_US |
dc.publication.originofpublisher | Foreign | en_US |
Appears in Collections: | JOURNAL ARTICLES |
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