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DC Field | Value | Language |
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dc.contributor.author | CHOWDHURY, TAMAGHNA | en_US |
dc.contributor.author | CHATTERJEE, SAGNIK | en_US |
dc.contributor.author | M. A., GOKUL | |
dc.contributor.author | GHOSH, PRASENJIT | |
dc.contributor.author | RAHMAN, ATIKUR et al. | |
dc.date.accessioned | 2024-08-28T05:17:56Z | |
dc.date.available | 2024-08-28T05:17:56Z | |
dc.date.issued | 2024-08 | en_US |
dc.identifier.citation | Physical Review B, 110(08), L081405. | en_US |
dc.identifier.issn | 2469-9950 | en_US |
dc.identifier.issn | 2469-9969 | en_US |
dc.identifier.uri | https://doi.org/10.1103/PhysRevB.110.L081405 | en_US |
dc.identifier.uri | http://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/9051 | |
dc.description.abstract | Transition-metal dichalcogenides (TMDs) host tightly bound electron-hole pairs—excitons—which can be either optically bright or dark based on spin and momentum selection rules. In tungsten-based TMDs, a momentum-forbidden dark exciton is the energy ground state, and therefore, it strongly affects the emission properties. In this work, we brighten the momentum-forbidden dark exciton by placing monolayer tungsten disulfide on top of nanotextured substrates, which imparts tensile strain, modifying its electronic band structure. This enables phonon-assisted exciton scattering between momentum valleys, thereby brightening momentum-forbidden dark excitons. In addition to offering a tuning knob for light-matter interactions in two-dimensional materials, our results pave the way for designing ultrasensitive strain-sensing devices based on TMDs. | en_US |
dc.language.iso | en | en_US |
dc.publisher | American Physical Society | en_US |
dc.subject | Monolayer | en_US |
dc.subject | Phonons | en_US |
dc.subject | Photoluminescence | en_US |
dc.subject | Transitions | en_US |
dc.subject | Graphene | en_US |
dc.subject | Films | en_US |
dc.subject | Layer | en_US |
dc.subject | 2024 | en_US |
dc.subject | 2024-AUG-WEEK2 | en_US |
dc.subject | TOC-AUG-2024 | en_US |
dc.title | Brightening of dark excitons in WS2 via tensile strain-induced excitonic valley convergence | en_US |
dc.type | Article | en_US |
dc.contributor.department | Dept. of Chemistrey | en_US |
dc.identifier.sourcetitle | Physical Review B | en_US |
dc.publication.originofpublisher | Foreign | en_US |
Appears in Collections: | JOURNAL ARTICLES |
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