Please use this identifier to cite or link to this item: http://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/9051
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dc.contributor.authorCHOWDHURY, TAMAGHNAen_US
dc.contributor.authorCHATTERJEE, SAGNIKen_US
dc.contributor.authorM. A., GOKUL
dc.contributor.authorGHOSH, PRASENJIT
dc.contributor.authorRAHMAN, ATIKUR et al.
dc.date.accessioned2024-08-28T05:17:56Z
dc.date.available2024-08-28T05:17:56Z
dc.date.issued2024-08en_US
dc.identifier.citationPhysical Review B, 110(08), L081405.en_US
dc.identifier.issn2469-9950en_US
dc.identifier.issn2469-9969en_US
dc.identifier.urihttps://doi.org/10.1103/PhysRevB.110.L081405en_US
dc.identifier.urihttp://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/9051
dc.description.abstractTransition-metal dichalcogenides (TMDs) host tightly bound electron-hole pairs—excitons—which can be either optically bright or dark based on spin and momentum selection rules. In tungsten-based TMDs, a momentum-forbidden dark exciton is the energy ground state, and therefore, it strongly affects the emission properties. In this work, we brighten the momentum-forbidden dark exciton by placing monolayer tungsten disulfide on top of nanotextured substrates, which imparts tensile strain, modifying its electronic band structure. This enables phonon-assisted exciton scattering between momentum valleys, thereby brightening momentum-forbidden dark excitons. In addition to offering a tuning knob for light-matter interactions in two-dimensional materials, our results pave the way for designing ultrasensitive strain-sensing devices based on TMDs.en_US
dc.language.isoenen_US
dc.publisherAmerican Physical Societyen_US
dc.subjectMonolayeren_US
dc.subjectPhononsen_US
dc.subjectPhotoluminescenceen_US
dc.subjectTransitionsen_US
dc.subjectGrapheneen_US
dc.subjectFilmsen_US
dc.subjectLayeren_US
dc.subject2024en_US
dc.subject2024-AUG-WEEK2en_US
dc.subjectTOC-AUG-2024en_US
dc.titleBrightening of dark excitons in WS2 via tensile strain-induced excitonic valley convergenceen_US
dc.typeArticleen_US
dc.contributor.departmentDept. of Chemistryen_US
dc.contributor.departmentDept. of Physics
dc.identifier.sourcetitlePhysical Review Ben_US
dc.publication.originofpublisherForeignen_US
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