Please use this identifier to cite or link to this item: http://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/9434
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dc.contributor.authorKEDIA, DINESH KUMARen_US
dc.contributor.authorJAKHAR, NAVITAen_US
dc.contributor.authorSINGH, SURJEETen_US
dc.date.accessioned2025-04-01T05:18:42Z
dc.date.available2025-04-01T05:18:42Z
dc.date.issued2025-03en_US
dc.identifier.citationReview of Scientific Instruments, 96(03).en_US
dc.identifier.issn0034-6748en_US
dc.identifier.issn1089-7623en_US
dc.identifier.urihttps://doi.org/10.1063/5.0240792en_US
dc.identifier.urihttp://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/9434
dc.description.abstractWe have developed a versatile, fully automated Hall measurement setup for operations between room temperature and 750 K and in magnetic fields up to ±10 kOe. Our compact sample holder design with localized heating and minimal heat losses enables precise temperature stability (better than ±10 mK at 750 K) and low power consumption (20–25 W). The setup is housed within a 26 mm air gap between the pole pieces of an electromagnet. The sample holder, enclosed in a quartz tube for a controlled atmosphere, can accommodate various sample shapes and sizes, which can be contacted using adjustable pressure-point contacts. Despite its compact size, bulk thermoelectric samples measuring up to 10 mm laterally can be analyzed successfully. A phase-sensitive lock-in technique and electromagnetic shielding ensure excellent sensitivity, allowing nanovolt Hall signal measurements in high-carrier-concentration samples. We have successfully applied this setup to diverse materials, including a lightly doped germanium (1014 cm−3), degenerate semiconductors from the half-Heusler family (1021 cm−3), and superionic thermoelectrics (1018 cm−3), demonstrating its versatility and reliability. Our results align well with those from commercial systems where available.en_US
dc.language.isoenen_US
dc.publisherAIP Publishingen_US
dc.subjectHall effecten_US
dc.subjectElectrical conductivityen_US
dc.subjectPrecision measurementsen_US
dc.subjectSemimetalsen_US
dc.subjectSemiconductor crystalsen_US
dc.subjectThermoelectric effectsen_US
dc.subjectThermoelectric materialsen_US
dc.subjectMetalsen_US
dc.subject2025-MAR-WEEK4en_US
dc.subjectTOC-MAR-2025en_US
dc.subject2025en_US
dc.titleAdvancing precision in Hall effect through localized heating with a compact designen_US
dc.typeArticleen_US
dc.contributor.departmentDept. of Physicsen_US
dc.identifier.sourcetitleReview of Scientific Instrumentsen_US
dc.publication.originofpublisherForeignen_US
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