Please use this identifier to cite or link to this item: http://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/9584
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dc.contributor.authorGlazov, Mikhailen_US
dc.contributor.authorARORA, ASHISHen_US
dc.contributor.authorChaves, Andreyen_US
dc.contributor.authorGobato, Yara Galvaoen_US
dc.date.accessioned2025-04-15T06:54:17Z-
dc.date.available2025-04-15T06:54:17Z-
dc.date.issued2024-08en_US
dc.identifier.citationMRS Bulletin, 4.9, 899–913en_US
dc.identifier.issn0883-7694en_US
dc.identifier.issn1938-1425en_US
dc.identifier.urihttps://doi.org/10.1557/s43577-024-00754-1en_US
dc.identifier.urihttp://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/9584-
dc.description.abstractTwo-dimensional (2D) materials are attractive systems to explore exciton physics and possible applications in optoelectronics, opto-spintronics, and quantum technologies. Monolayer transition-metal dichalcogenides (TMDs) are direct gap 2D semiconductor materials with robust excitons and two inequivalent K+ and K− valleys. They can be vertically stacked to form van der Waals (vdW) heterostructures with typically Type II band alignment that enables the formation of interlayer excitons (IEs) and creates Moiré patterns. Magnetic 2D materials are also promising systems to explore exciton physics and their correlations with magnetic properties. They can be stacked with TMD materials to form magnetic vdW heterostructures. Their optical properties are strongly dependent on the number of layers, charge transfer, defects, strain, and twist angle stacking, which offer a versatile platform to control their physical properties. Here, we review some recent discoveries on the exciton and valley properties of van der Waals materials and heterostructures.en_US
dc.language.isoenen_US
dc.publisherSpringer Natureen_US
dc.subject2D materialsen_US
dc.subjectHeterostructureen_US
dc.subjectOptical propertiesen_US
dc.subjectMagneto-opticen_US
dc.subject2024en_US
dc.titleExcitons in two-dimensional materials and heterostructures: Optical and magneto-optical propertiesen_US
dc.typeArticleen_US
dc.contributor.departmentDept. of Physicsen_US
dc.identifier.sourcetitleMRS Bulletinen_US
dc.publication.originofpublisherForeignen_US
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