Study of Charged Particle Transport in a Wide Bandgap Semiconductor with Applications to Ionizing Radiation Detection

Abstract

Wide bandgap semiconductors (WBGs) have emerged as promising materials for ionizing radiation detection due to their superior electronic properties, high breakdown voltages, and enhanced radiation resistance. This study focuses on the fabrication and characterization of titanium dioxide (TiO₂) as a potential candidate for next-generation radiation detectors. Through a systematic exploration of material processing techniques, structural integrity, and optical performance, this research evaluates TiO₂’s viability in extreme environments. The experimental approach involved multiple oxidation processes, with each process refining the material’s structural and electronic properties. Scanning Electron Microscopy and Atomic Force Microscopy suggest improvements in surface morphology and oxide layer uniformity with optimized processing conditions. X-ray Diffraction confirmed purity, which plays a crucial role in charge transport efficiency. Ultraviolet-Visible spectroscopy provided insights into bandgap modifications, demonstrating a shift in optical properties that could enhance radiation response. Findings indicate that optimizing oxidation conditions improves the crystalline quality, surface smoothness, and electronic structure of TiO₂, making it a strong candidate for radiation detection applications. Future research will focus on integrating TiO₂ films into functional detector prototypes, evaluating their charge collection efficiency, and assessing their long-term stability under radiation exposure. This study contributes to the advancement of semiconductor-based radiation detection technologies, with potential applications in mainly, but not limited to, high-energy physics, medical imaging, and nuclear security.