Please use this identifier to cite or link to this item: http://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/9916
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dc.contributor.authorParveen, Sumaiyaen_US
dc.contributor.authorPal, Pratap Kumaren_US
dc.contributor.authorMukhopadhyay, Suchetanaen_US
dc.contributor.authorMAJUMDER, SUDIPTA
dc.contributor.authorBISOI, SWAPNESWAR
dc.contributor.authorRAHMAN, ATIKUR
dc.contributor.authorBarman, Anjan
dc.date.accessioned2025-05-16T10:53:05Z
dc.date.available2025-05-16T10:53:05Z
dc.date.issued2025-02en_US
dc.identifier.citationNanoscale, 17(05), 2800-2809.en_US
dc.identifier.issn2040-3372en_US
dc.identifier.urihttps://doi.org/10.1039/D4NR03866Een_US
dc.identifier.urihttp://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/9916
dc.description.abstractHerein, we investigated the carrier–phonon relaxation process in a two-dimensional (2D) BA2PbBr4 perovskite and its heterostructure with MoS2. Energy transfer was observed in the van der Waals heterostructure of 2D perovskite and monolayer MoS2, leading to enhancement in the photoluminescence intensity of MoS2. Femtosecond pump–probe spectroscopy was used to study the carrier and lattice dynamics of pristine 2D materials and their heterostructure. A generalized two-temperature model was introduced to include competing effects of electron cooling in the rate equation of electron and lattice relaxation dynamics. The hot phonon bottleneck effect is more enhanced in the BA2PbBr4/MoS2 heterostructure than in pristine BA2PbBr4, resulting in a longer electron relaxation time. By developing a heterostructure platform with 2D BA2PbBr4 and MoS2 hybrid materials, this work provides a unique opportunity to understand and tailor carrier dynamics, interfacial coupling, and long-lived hot electrons, ultimately enhancing the efficiency of optoelectronic devices.en_US
dc.language.isoenen_US
dc.publisherRoyal Society of Chemistryen_US
dc.subjectPhysicsen_US
dc.subject2025-MAY-WEEK2en_US
dc.subjectTOC-MAY-2025en_US
dc.subject2025en_US
dc.titleHot carrier dynamics in the BA2PbBr4/MoS2 heterostructureen_US
dc.typeArticleen_US
dc.contributor.departmentDept. of Physicsen_US
dc.application.codeBarman, Anjan
dc.identifier.sourcetitleNanoscaleen_US
dc.publication.originofpublisherForeignen_US
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