Abstract:
Transition metal dichalcogenides (TMDCs) exhibit considerable potential for a variety of applications due to their inherent properties such as high spin–orbit coupling and bandgap tunability. To realize this potential of TMDCs a thorough investigation of their fundamental properties is imperative. Here we focus on the TMDC zirconium ditelluride ZrTe2. When Zr-based compounds undergo oxidation, they form ZrO2, a material well-known for its high dielectric properties, making it useful in metal-oxide-semiconductor field-effect transistor (MOSFET) design. To effectively harness and characterize the properties of ZrTe2 and other Zr-based compounds, a comprehensive understanding of their oxidation processes is essential. Motivated by these considerations, the oxidation dynamics and mechanisms of ZrTe2 were investigated using atomic force microscopy (AFM), high-resolution transmission electron microscopy (HRTEM), and Raman spectroscopy to monitor the degradation process over time. These findings reveal that ZrTe2 undergoes rapid oxidation at its edges and surfaces, leading to the formation of amorphous ZrO2 as well as Te aggregation. This oxidation process significantly modifies the properties of ZrTe2. This has important implications for designing potential applications in low-cost oxygen sensors and electronic devices.