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Quantum dot–induced phase stabilization of α-CsPbI3 perovskite for high-efficiency photovoltaics

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dc.contributor.author SWARNKAR, ABHISHEK en_US
dc.contributor.author Marshall, Ashley R. en_US
dc.contributor.author Sanehira, Erin M. en_US
dc.contributor.author Chernomordik, Boris D. en_US
dc.contributor.author Moore, David T. en_US
dc.contributor.author Christian, Jeffrey A. en_US
dc.date.accessioned 2019-04-29T09:21:49Z
dc.date.available 2019-04-29T09:21:49Z
dc.date.issued 2016-10 en_US
dc.identifier.citation Science, 354(6308), 92-95. en_US
dc.identifier.issn 0036-8075 en_US
dc.identifier.issn 1095-9203 en_US
dc.identifier.uri http://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/2637
dc.identifier.uri https://doi.org/10.1126/science.aag2700 en_US
dc.description.abstract We show nanoscale phase stabilization of CsPbI3 quantum dots (QDs) to low temperatures that can be used as the active component of efficient optoelectronic devices. CsPbI3 is an all-inorganic analog to the hybrid organic cation halide perovskites, but the cubic phase of bulk CsPbI3 (α-CsPbI3)—the variant with desirable band gap—is only stable at high temperatures. We describe the formation of α-CsPbI3 QD films that are phase-stable for months in ambient air. The films exhibit long-range electronic transport and were used to fabricate colloidal perovskite QD photovoltaic cells with an open-circuit voltage of 1.23 volts and efficiency of 10.77%. These devices also function as light-emitting diodes with low turn-on voltage and tunable emission. en_US
dc.language.iso en en_US
dc.publisher American Association for the Advancement of Science en_US
dc.subject Quantum dot-induced phase en_US
dc.subject CsPbI3 en_US
dc.subject High-efficiency photovoltaics en_US
dc.subject 2016 en_US
dc.title Quantum dot–induced phase stabilization of α-CsPbI3 perovskite for high-efficiency photovoltaics en_US
dc.type Article en_US
dc.contributor.department Dept. of Chemistry en_US
dc.identifier.sourcetitle Science en_US
dc.publication.originofpublisher Foreign en_US


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