dc.contributor.author |
Date, Mihir |
en_US |
dc.contributor.author |
Mukherjee, Sudipta |
en_US |
dc.contributor.author |
Ghosh, Joydeep |
en_US |
dc.contributor.author |
Saha, Dipankar |
en_US |
dc.contributor.author |
Ganguly, Swaroop |
en_US |
dc.contributor.author |
Laha, Apurba |
en_US |
dc.contributor.author |
GHOSH, PRASENJIT |
en_US |
dc.date.accessioned |
2019-09-27T06:03:04Z |
|
dc.date.available |
2019-09-27T06:03:04Z |
|
dc.date.issued |
2019-09 |
en_US |
dc.identifier.citation |
Japanese Journal of Applied Physics, 58(9). |
en_US |
dc.identifier.issn |
0021-4922 |
en_US |
dc.identifier.issn |
1347-4065 |
en_US |
dc.identifier.uri |
http://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/4100 |
|
dc.identifier.uri |
https://doi.org/10.7567/1347-4065/ab39d0 |
en_US |
dc.description.abstract |
We have addressed the existing ambiguity regarding the effect of tensile strain in the underlying GaN layer on Al x Ga1−x N/GaN heterostructure properties. The bandgaps and band-offsets for Al x Ga1−x N on strained GaN were first computed using density functional theory (DFT), in the generalized gradient approximations (GGA) and hybrid functional Gaussian–Perdew–Burke–Ernzerhof (Gau–PBE) regimes. We propose a simple model to relate the GGA and Gau–PBE bandgaps, which is used to determine the realistic bandgaps of strained AlGaN. The bandgaps and band-offsets from the DFT calculations are then used to analytically calculate the two-dimensional electron gas density in an Al x Ga1−x N/GaN hetero-interface. Our bandstructure calculations show that it is not possible to induce significant change in band-offsets through strain in the GaN layer. The charge-density calculations indicate that such strain can, however, modulate the polarization charge and thereby enhance the 2DEG density at the AlGaN/GaN interface substantially. |
en_US |
dc.language.iso |
en |
en_US |
dc.publisher |
IOP Publishing |
en_US |
dc.subject |
Band-Gap |
en_US |
dc.subject |
ALXGA1-XN |
en_US |
dc.subject |
Temperature |
en_US |
dc.subject |
Dependence |
en_US |
dc.subject |
Constants |
en_US |
dc.subject |
TOC-SEP-2019 |
en_US |
dc.subject |
2019 |
en_US |
dc.title |
Efficient ab initio plus analytic calculation of the effect of GaN layer tensile strain in AlGaN/GaN heterostructures |
en_US |
dc.type |
Article |
en_US |
dc.contributor.department |
Dept. of Physics |
en_US |
dc.identifier.sourcetitle |
Japanese Journal of Applied Physics |
en_US |
dc.publication.originofpublisher |
Foreign |
en_US |