Abstract:
In recent years 2D materials like monolayer of transition metal dichalcogenides (TMDs) have caught enormous interest due to their potential applications in electronic, optoelectronic, spintronic, valleytronic and twistronic devices. To grow large-area monolayer of these materials, chemical vapor deposition (CVD) is one of the most widely used techniques. But the size and quality of the samples are critically dependent on the various growth conditions. As a result, the CVD parameters vary from lab to lab and often it is difficult to find a stable and reproducible growth condition. Here we have demonstrated a methodology for the quick and easy optimization of various growth parameters of 2D materials using CVD. We have taken MoS2 as a model 2D system and discussed the way to achieve an optimum recipe for the growth of large-area monolayer reproducibly. We have done thorough electrical and optoelectrical characterization to show the device performance of the samples grown in various conditions. The methodology will help to optimize the growth condition of any other 2D materials easily and quickly.