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How to 'train' your CVD to grow large-area 2D materials

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dc.contributor.author NARAYANAN, VRINDA en_US
dc.contributor.author M A , GOKUL en_US
dc.contributor.author RAHMAN, ATIKUR en_US
dc.date.accessioned 2019-12-24T12:19:31Z
dc.date.available 2019-12-24T12:19:31Z
dc.date.issued 2019-12 en_US
dc.identifier.citation Materials Research Express, 6(12). en_US
dc.identifier.issn 2053-1591 en_US
dc.identifier.uri http://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/4288
dc.identifier.uri https://doi.org/10.1088/2053-1591/ab5383 en_US
dc.description.abstract In recent years 2D materials like monolayer of transition metal dichalcogenides (TMDs) have caught enormous interest due to their potential applications in electronic, optoelectronic, spintronic, valleytronic and twistronic devices. To grow large-area monolayer of these materials, chemical vapor deposition (CVD) is one of the most widely used techniques. But the size and quality of the samples are critically dependent on the various growth conditions. As a result, the CVD parameters vary from lab to lab and often it is difficult to find a stable and reproducible growth condition. Here we have demonstrated a methodology for the quick and easy optimization of various growth parameters of 2D materials using CVD. We have taken MoS2 as a model 2D system and discussed the way to achieve an optimum recipe for the growth of large-area monolayer reproducibly. We have done thorough electrical and optoelectrical characterization to show the device performance of the samples grown in various conditions. The methodology will help to optimize the growth condition of any other 2D materials easily and quickly. en_US
dc.language.iso en en_US
dc.publisher IOP Publishing en_US
dc.subject Field-Effect Transistors en_US
dc.subject Mos2 Atomic Layers en_US
dc.subject Grain-Boundaries en_US
dc.subject Epitaxial-Growth en_US
dc.subject Phase Growth en_US
dc.subject Monolayer en_US
dc.subject Parameters en_US
dc.subject TOC-DEC-2019 en_US
dc.subject 2019 en_US
dc.title How to 'train' your CVD to grow large-area 2D materials en_US
dc.type Article en_US
dc.contributor.department Dept. of Physics en_US
dc.identifier.sourcetitle Materials Research Express en_US
dc.publication.originofpublisher Foreign en_US


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