Digital Repository

Pressure-induced phase transitions in the topological crystalline insulator SnTe and its comparison with semiconducting SnSe: Raman and first-principles studies

Show simple item record

dc.contributor.author Pal, Sukanya en_US
dc.contributor.author Arora, Raagya en_US
dc.contributor.author Roychowdhury, Subhajit en_US
dc.contributor.author HARNAGEA, LUMINITA en_US
dc.contributor.author SAURABH, KUMAR en_US
dc.contributor.author Shenoy, Sandhya en_US
dc.contributor.author Muthu, D. V. S. en_US
dc.contributor.author Biswas, Kanishka en_US
dc.contributor.author Waghmare, U. V. en_US
dc.contributor.author Sood, A. K. en_US
dc.date.accessioned 2020-04-17T06:09:20Z
dc.date.available 2020-04-17T06:09:20Z
dc.date.issued 2020-04 en_US
dc.identifier.citation Physical Review B, 101(15). en_US
dc.identifier.issn 2469-9950 en_US
dc.identifier.issn 2469-9969 en_US
dc.identifier.uri http://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/4547
dc.identifier.uri https://doi.org/10.1103/PhysRevB.101.155202 en_US
dc.description.abstract SnTe is a narrow band-gap topological crystalline insulator (TCI), whereas SnSe is a normal semiconductor. We report Raman study of SnTe and SnSe as a function of pressure at room temperature along with first-principles density functional theory calculations. Under pressure, isostructural transition is observed in SnTe, as revealed by the anomalous softening of the strongest Raman mode up to 1.5 GPa, accompanied by an increase in the linewidth. Our first-principles calculations show that the mirror Chern number of SnTe does not change and the TCI phase remains unaffected by pressure. Raman signatures of its phase transition at 1.5 GPa are associated with phonon instability at the Γ point and inversion of the lowest-energy conduction bands. An anomaly in the electron-phonon coupling results in anomalous behavior of the Raman modes at this pressure. Further, SnTe undergoes structural transitions at ∼ 5.8 , ∼ 12 , and ∼ 18.3 GPa . The 5.8-GPa transition is associated with a structural transition from the ambient cubic ( F m ¯ 3 m ) to orthorhombic (Pnma) phase, which is no longer a topological insulator, resulting in a topological phase transition. Above the transition pressure of 12 GPa, another orthorhombic Pnma[GeS] phase is stabilized, coexisting with the Pnma phase. The reduction in the number of observed Raman modes above ∼ 18.3 GPa and enthalpy calculations show a transition from orthorhombic (Pnma) to a more symmetric cubic ( Pm ¯ 3 m ) structure. Our high-pressure study of SnSe, on the other hand, reveals that it undergoes two phase transitions: one from the orthorhombic (Pnma) structure to the orthorhombic (Cmcm) structure at ∼ 6.2 GPa and the other at ∼ 12.9 GPa , in which the Cmcm phase undergoes a semimetal to metal transition. Density functional theory calculations capture the contrast in the pressure-dependent behavior of the topological crystalline insulator SnTe and the normal semiconductor SnSe. en_US
dc.language.iso en en_US
dc.publisher American Physical Society en_US
dc.subject Physics en_US
dc.subject TOC-APR-2020 en_US
dc.subject 2020 en_US
dc.subject 2020-APR-WEEK3 en_US
dc.title Pressure-induced phase transitions in the topological crystalline insulator SnTe and its comparison with semiconducting SnSe: Raman and first-principles studies en_US
dc.type Article en_US
dc.contributor.department Dept. of Physics en_US
dc.identifier.sourcetitle Physical Review B en_US
dc.publication.originofpublisher Foreign en_US


Files in this item

Files Size Format View

There are no files associated with this item.

This item appears in the following Collection(s)

Show simple item record

Search Repository


Advanced Search

Browse

My Account