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Modulating flow near substrate surface to grow clean and large-area monolayer MoS2

Show simple item record GOKUL, M. A. en_US NARAYANAN, VRINDA en_US RAHMAN, ATIKUR en_US 2020-08-22T12:16:43Z 2020-08-22T12:16:43Z 2020-10 en_US
dc.identifier.citation Nanotechnology, 31(41). en_US
dc.identifier.issn 0957-4484 en_US
dc.identifier.issn 1361-6528 en_US
dc.identifier.uri en_US
dc.description.abstract Chemical vapour deposition (CVD) is one of the most promising methods to synthesize monolayers of 2D materials like transition metal dichalcogenides (TMDs) over a large area with high film quality. Among many parameters that determine the growth of 2D materials, flow of precursor near the surface is one of the most sensitive conditions. In this study, we show how subtle changes in the flow near the substrate surface can affect the quality and coverage of the MoS2 monolayer. We fine tune the flow of the carrier gas near the substrate under two extreme conditions to grow large area and clean monolayer. In the first study, we grew several centimetres long continuous monolayer under the condition, which generally produces monolayers of few tens of micrometres in size without tuning the flow on the substrate surface. In the second case, we got monolayer MoS2 under the conditions meant for the formation of bulk MoS2.We achieved this by placing blockades on the substrate surface which helped in modifying the flow near them. Through simulation, we showed how the flow is affected near these blockades and used it as a guiding rule to grow patterned continuous MoS2 monolayers. Detailed electrical and optical measurements were done to determine the quality of the as-grown samples. Our studies provide a way to obtain clean, large area monolayer of desired pattern by tuning the flow of precursor on the vicinity of the substrate surface even when the growth conditions in CVD are far from optimum. en_US
dc.language.iso en en_US
dc.publisher IOP Publishing en_US
dc.subject 2D materials en_US
dc.subject Molybdenum disulphide en_US
dc.subject Chemical vapour deposition en_US
dc.subject Patterned growth en_US
dc.subject TOC-AUG-2020 en_US
dc.subject 2020 en_US
dc.subject 2020-AUG-WEEK3 en_US
dc.title Modulating flow near substrate surface to grow clean and large-area monolayer MoS2 en_US
dc.type Article en_US
dc.contributor.department Dept. of Physics en_US
dc.identifier.sourcetitle Nanotechnology en_US
dc.publication.originofpublisher Foreign en_US

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