dc.contributor.author |
Ethiraj, Anita Sagadevan |
en_US |
dc.contributor.author |
Rhen, Dani |
en_US |
dc.contributor.author |
Lee, D. H. |
en_US |
dc.contributor.author |
Kang, Dae Joon |
en_US |
dc.contributor.author |
KULKARNI, S. K. |
en_US |
dc.coverage.spatial |
- |
en_US |
dc.date.accessioned |
2021-01-25T04:44:57Z |
|
dc.date.available |
2021-01-25T04:44:57Z |
|
dc.date.issued |
2016-05 |
en_US |
dc.identifier.citation |
AIP Conference Proceedings, 1728(1). |
en_US |
dc.identifier.isbn |
- |
en_US |
dc.identifier.issn |
0094-243X |
en_US |
dc.identifier.issn |
1551-7616 |
en_US |
dc.identifier.uri |
http://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/5553 |
|
dc.identifier.uri |
https://doi.org/10.1063/1.4946605 |
en_US |
dc.description.abstract |
The present work is focused on the investigation of thioglycerol (TG) stabilized Zinc Sulfide Quantum dots (ZnS QDs) in the hybrid electroluminescence (EL) device. Optical absorption spectroscopy clearly indicates the formation of narrow size distributed ZnS in the quantum confinement regime. X-ray Diffraction (XRD), Photoluminescence (PL), Energy Dispersive X-ray Spectroscopy (EDS) data supports the same. The hybrid EL device with structure of ITO (indium tin oxide)//PEDOT:PSS ((poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate)//HTL (α NPD- N,N′-diphenyl-N,N′-bis(1-naphthyl)-(1,1′-phenyl)-4,4′-diamine// PVK:ZnS QDs//ETL(PBD- 2-tert-butylphenyl- 5-biphenyl-1,3,4-oxadiazole)//LiF:Al (Device 1) was fabricated. Reference device without the ZnS QDs were also prepared (Device 2). The results show that the ZnS QDs based device exhibited bright electroluminescence emission of 24 cd/m2 at a driving voltage of 16 Volts under the forward bias conditions as compared to the reference device without the ZnS QDs, which showed 6 cd/m2 at ∼22 Volts. |
en_US |
dc.language.iso |
en |
en_US |
dc.publisher |
AIP Publishing |
en_US |
dc.subject |
Physics |
en_US |
dc.subject |
2016 |
en_US |
dc.title |
Investigation of thioglycerol stabilized ZnS quantum dots in electroluminescent device performance |
en_US |
dc.type |
Conference Papers |
en_US |
dc.contributor.department |
Dept. of Physics |
en_US |
dc.identifier.doi |
https://doi.org/10.1063/1.4946605 |
en_US |
dc.identifier.sourcetitle |
AIP Conference Proceedings |
en_US |
dc.publication.originofpublisher |
Foreign |
en_US |