Lateral Epitaxial Heterostructures of Halide Perovskites for Diode Application

dc.contributor.author	MANDAL, TARAK NATH	en_US
dc.contributor.author	Jana, Atanu	en_US
dc.date.accessioned	2021-03-02T05:57:41Z
dc.date.available	2021-03-02T05:57:41Z
dc.date.issued	2020-09	en_US
dc.identifier.citation	Matter, 3(3), 617-619.	en_US
dc.identifier.issn	2590-2385	en_US
dc.identifier.uri	http://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/5670
dc.identifier.uri	https://doi.org/10.1016/j.matt.2020.06.027	en_US
dc.description.abstract	Solution-processed lateral epitaxial growth of two-dimensional (2D) halide perovskite heterostructures, multiheterostructures, and superlattices is a daunting task because of their soft fragile ionic bonding and high intrinsic ion mobility of halide ions. Recently, these structures have been successfully developed for Pb2+- and Sn2+-based 2D halide perovskites using various large organic molecules, and its potential energy application has been shown in thin-film electrical diodes.	en_US
dc.language.iso	en	en_US
dc.publisher	Elsevier B.V.	en_US
dc.subject	Chemistry	en_US
dc.subject	2020	en_US
dc.title	Lateral Epitaxial Heterostructures of Halide Perovskites for Diode Application	en_US
dc.type	Editorial Material	en_US
dc.contributor.department	Dept. of Chemistry	en_US
dc.identifier.sourcetitle	Matter	en_US
dc.publication.originofpublisher	Foreign	en_US