High sensitivity low field magnetically gated resistive switching in CoFe2O4/La0.66Sr0.34MnO3 heterostructure

OGALE, SATISHCHANDRA et al.; Thakare, Vishal

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dc.contributor.author	Thakare, Vishal	en_US
dc.contributor.author	OGALE, SATISHCHANDRA et al.	en_US
dc.date.accessioned	2022-06-16T04:17:46Z
dc.date.available	2022-06-16T04:17:46Z
dc.date.issued	2012-03	en_US
dc.identifier.citation	Applied Physics Letters, 100(12), 172412.	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.issn	077-3118	en_US
dc.identifier.uri	https://doi.org/10.1063/1.4707373	en_US
dc.identifier.uri	http://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/7088
dc.description.abstract	The phenomenon of resistive switching (RS) has been demonstrated in several non-magnetic and some magnetic oxide systems, however the “magnetic” aspect of magnetic oxides has not been emphasized especially in terms of low field tunability. In our work, we examined the CoFe2O4/La0.66Sr0.34MnO3 all-magnetic oxide interface system for RS and discovered a very sharp (bipolar) transition at room temperature that can be gated with high sensitivity by low magnetic fields (∼0–100 mT). By using a number of characterizations, we show that this is an interface effect, which may open up interesting directions for manipulation of the RS phenomenon.	en_US
dc.language.iso	en	en_US
dc.publisher	AIP Publishing	en_US
dc.subject	Physics	en_US
dc.subject	2012	en_US
dc.title	High sensitivity low field magnetically gated resistive switching in CoFe2O4/La0.66Sr0.34MnO3 heterostructure	en_US
dc.type	Article	en_US
dc.contributor.department	Dept. of Physics	en_US
dc.identifier.sourcetitle	Applied Physics Letters	en_US
dc.publication.originofpublisher	Foreign	en_US