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Gate and Temperature Driven Phase Transitions in Few-Layer MoTe2

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dc.contributor.author Kowalczyk, Hugo en_US
dc.contributor.author Biscaras, Johan en_US
dc.contributor.author PISTAWALA, NASHRA en_US
dc.contributor.author HARNAGEA, LUMINITA en_US
dc.contributor.author SINGH, SURJEET en_US
dc.contributor.author Shukla, Abhay en_US
dc.date.accessioned 2023-04-19T06:48:09Z
dc.date.available 2023-04-19T06:48:09Z
dc.date.issued 2023-04 en_US
dc.identifier.citation ACS Nano, 17(7), 6708–6718. en_US
dc.identifier.issn 1936-0851 en_US
dc.identifier.issn 1936-086X en_US
dc.identifier.uri https://doi.org/10.1021/acsnano.2c12610 en_US
dc.identifier.uri http://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/7710
dc.description.abstract MoTe2 has a stable hexagonal semiconducting phase (2H) as well as two semimetallic phases with monoclinic (1T′) and orthorhombic (Td) structures. A structural change can thus be accompanied by a significant change in electronic transport properties. The two semimetallic phases are connected by a temperature driven transition and could exhibit topological properties. Here we make extensive Raman measurements as a function of layer thickness, temperature, and electrostatic doping on few layer 2H-MoTe2 and also on 1T′-MoTe2 and Td-WTe2. Recent work in MoTe2 has raised the possibility of a 2H-1T′ transition through technology compatible pathways. It has been claimed that such a transition, of promise for device applications, is activated by electrostatic gating. We investigate this claim and find that few-layer tellurides are characterized by high mobility of Te ions, even in ambient conditions and especially through the variation of external parameters like electric field or temperature. These can generate Te clusters, vacancies at crystalline sites, and facilitate structural transitions. We however find that the purported 2H-1T′ transition in MoTe2 cannot be obtained by a pure electrostatic field. en_US
dc.language.iso en en_US
dc.publisher American Chemical Society en_US
dc.subject Phase transition en_US
dc.subject Transition metal dichalcogenides en_US
dc.subject MoTe2 en_US
dc.subject WTe2 en_US
dc.subject Electrostatic doping en_US
dc.subject 2023-APR-WEEK1 en_US
dc.subject TOC-APR-2023 en_US
dc.subject 2023 en_US
dc.title Gate and Temperature Driven Phase Transitions in Few-Layer MoTe2 en_US
dc.type Article en_US
dc.contributor.department Dept. of Physics en_US
dc.identifier.sourcetitle ACS Nano en_US
dc.publication.originofpublisher Foreign en_US


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