dc.contributor.author |
SINDHU, POOJA |
en_US |
dc.contributor.author |
BALLAV, NIRMALYA |
en_US |
dc.date.accessioned |
2023-07-21T10:38:05Z |
|
dc.date.available |
2023-07-21T10:38:05Z |
|
dc.date.issued |
2023-07 |
en_US |
dc.identifier.citation |
Inorganic Chemistry, 62(28), 10887–10891. |
en_US |
dc.identifier.issn |
0020-1669 |
en_US |
dc.identifier.issn |
1520-510X |
en_US |
dc.identifier.uri |
https://doi.org/10.1021/acs.inorgchem.3c01489 |
en_US |
dc.identifier.uri |
http://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/8078 |
|
dc.description.abstract |
Depositing thin films of pristine metal–organic framework (MOF) on top of a lattice-matched and molecularly doped MOF could provide a new path for generating electronic heterostructures of MOFs with well-defined interfaces. Herein, the Cu3BTC2 (top-layer)/TCNQ@Cu3BTC2 (bottom-layer) system is fabricated by sequential deposition on a functionalized Au substrate, and clear-cut rectification of electrical current across the thin film was observed at room-temperature. Interestingly, the electrical current rectification ratio (RR) was found to be significantly influenced by the effect of temperature (400 K), resulting in a remarkable figure in the domain of MOFs. |
en_US |
dc.language.iso |
en |
en_US |
dc.publisher |
American Chemical Society |
en_US |
dc.subject |
Doping |
en_US |
dc.subject |
Electrical conductivity |
en_US |
dc.subject |
Layers |
en_US |
dc.subject |
Metal organic frameworks |
en_US |
dc.subject |
Thin films |
en_US |
dc.subject |
2023-JUL-WEEK2 |
en_US |
dc.subject |
TOC-JUL-2023 |
en_US |
dc.subject |
2023 |
en_US |
dc.title |
Thin Films of MOF-on-Guest@MOF: A Simple Strategy of Designing Electronic Heterostructures |
en_US |
dc.type |
Article |
en_US |
dc.contributor.department |
Dept. of Chemistry |
en_US |
dc.identifier.sourcetitle |
Inorganic Chemistry |
en_US |
dc.publication.originofpublisher |
Foreign |
en_US |