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Synthesis and Characterization of 2D Tellurene Flakes for Device Application

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dc.contributor.advisor RAHMAN, ATIKUR
dc.contributor.author THANGARAJ, ROHAN
dc.date.accessioned 2024-05-15T09:02:40Z
dc.date.available 2024-05-15T09:02:40Z
dc.date.issued 2024-05
dc.identifier.citation 69 en_US
dc.identifier.uri http://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/8776
dc.description.abstract Tellurene, a single layer of tellurium atoms arranged in a zig-zag chain structure, is a recent addition to the family of 2D materials. It has a trigonal crystal lattice with inherent structural anisotropy. Tellurene has huge potential for nanoelectronic and opto-electronic applications. Tellurene has interesting properties e.g., semiconducting, photoconductive, thermoelectric, piezoelectric, topological, and acousto-optic properties making it suitable for application in electronics, sensors, optoelectronics and energy devices. Additionally, Tellurene exhibits extraordinary carrier mobility, high stretchability, and significant optical absorption. Due to its inherent structural anisotropy, previously reported methods were not very successful in synthesizing 2D sheets. However, the solvothermal technique is a substrate-free solution process that can produce large area, high-quality Tellurene without the need for high growth temperature, delicate control of growth atmosphere, or specific substrate for growth, unlike other methods like CVD, PVD, etc. So far there hasn’t been much in-depth study of electronic or optoelectronic properties of solution grown Tellurene. In this thesis we have synthesized 2D Tellurene using solvothermal technique and studied their properties in detail. After synthesis, the morphology and structure of the samples were characterized by using SEM, TEM, XRD, AFM, STM and Raman spectroscopy. This work mainly involves the study of electrical and opto-electronic properties of Tellurene by fabricating devices using photo-lithography. The electrical properties such as mobility, on/off ratio, current density and opto-electronic properties such as rise time, fall time, on/off ratio were studied in detail. Devices with different contact material were made on the as-grown flakes. The contact resistance between various materials such as Platinum, Palladium, Nickel and Gold were studied. The effect of these contact materials on the properties of Tellurene flakes were also studied in detail. For the first time we herein report the observation of contact induced metallization of Tellurene flakes. The polarization dependent imaging of the samples were also performed. en_US
dc.description.sponsorship INSPIRE fellowship (DST, India) en_US
dc.language.iso en en_US
dc.subject 2D materials en_US
dc.subject Tellurene en_US
dc.subject Hydrothermal synthesis en_US
dc.subject Contact resistance en_US
dc.subject Contact induced metallization en_US
dc.subject Electrical and optoelectronic characterization en_US
dc.title Synthesis and Characterization of 2D Tellurene Flakes for Device Application en_US
dc.type Thesis en_US
dc.description.embargo One Year en_US
dc.type.degree BS-MS en_US
dc.contributor.department Dept. of Physics en_US
dc.contributor.registration 20191154 en_US


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  • MS THESES [1705]
    Thesis submitted to IISER Pune in partial fulfilment of the requirements for the BS-MS Dual Degree Programme/MSc. Programme/MS-Exit Programme

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