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Brightening of dark excitons in WS2 via tensile strain-induced excitonic valley convergence

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dc.contributor.author CHOWDHURY, TAMAGHNA en_US
dc.contributor.author CHATTERJEE, SAGNIK en_US
dc.contributor.author M. A., GOKUL
dc.contributor.author GHOSH, PRASENJIT
dc.contributor.author RAHMAN, ATIKUR et al.
dc.date.accessioned 2024-08-28T05:17:56Z
dc.date.available 2024-08-28T05:17:56Z
dc.date.issued 2024-08 en_US
dc.identifier.citation Physical Review B, 110(08), L081405. en_US
dc.identifier.issn 2469-9950 en_US
dc.identifier.issn 2469-9969 en_US
dc.identifier.uri https://doi.org/10.1103/PhysRevB.110.L081405 en_US
dc.identifier.uri http://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/9051
dc.description.abstract Transition-metal dichalcogenides (TMDs) host tightly bound electron-hole pairs—excitons—which can be either optically bright or dark based on spin and momentum selection rules. In tungsten-based TMDs, a momentum-forbidden dark exciton is the energy ground state, and therefore, it strongly affects the emission properties. In this work, we brighten the momentum-forbidden dark exciton by placing monolayer tungsten disulfide on top of nanotextured substrates, which imparts tensile strain, modifying its electronic band structure. This enables phonon-assisted exciton scattering between momentum valleys, thereby brightening momentum-forbidden dark excitons. In addition to offering a tuning knob for light-matter interactions in two-dimensional materials, our results pave the way for designing ultrasensitive strain-sensing devices based on TMDs. en_US
dc.language.iso en en_US
dc.publisher American Physical Society en_US
dc.subject Monolayer en_US
dc.subject Phonons en_US
dc.subject Photoluminescence en_US
dc.subject Transitions en_US
dc.subject Graphene en_US
dc.subject Films en_US
dc.subject Layer en_US
dc.subject 2024 en_US
dc.subject 2024-AUG-WEEK2 en_US
dc.subject TOC-AUG-2024 en_US
dc.title Brightening of dark excitons in WS2 via tensile strain-induced excitonic valley convergence en_US
dc.type Article en_US
dc.contributor.department Dept. of Chemistrey en_US
dc.identifier.sourcetitle Physical Review B en_US
dc.publication.originofpublisher Foreign en_US


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