dc.contributor.author |
CHOWDHURY, TAMAGHNA |
en_US |
dc.contributor.author |
CHATTERJEE, SAGNIK |
en_US |
dc.contributor.author |
M. A., GOKUL |
|
dc.contributor.author |
GHOSH, PRASENJIT |
|
dc.contributor.author |
RAHMAN, ATIKUR et al. |
|
dc.date.accessioned |
2024-08-28T05:17:56Z |
|
dc.date.available |
2024-08-28T05:17:56Z |
|
dc.date.issued |
2024-08 |
en_US |
dc.identifier.citation |
Physical Review B, 110(08), L081405. |
en_US |
dc.identifier.issn |
2469-9950 |
en_US |
dc.identifier.issn |
2469-9969 |
en_US |
dc.identifier.uri |
https://doi.org/10.1103/PhysRevB.110.L081405 |
en_US |
dc.identifier.uri |
http://dr.iiserpune.ac.in:8080/xmlui/handle/123456789/9051 |
|
dc.description.abstract |
Transition-metal dichalcogenides (TMDs) host tightly bound electron-hole pairs—excitons—which can be either optically bright or dark based on spin and momentum selection rules. In tungsten-based TMDs, a momentum-forbidden dark exciton is the energy ground state, and therefore, it strongly affects the emission properties. In this work, we brighten the momentum-forbidden dark exciton by placing monolayer tungsten disulfide on top of nanotextured substrates, which imparts tensile strain, modifying its electronic band structure. This enables phonon-assisted exciton scattering between momentum valleys, thereby brightening momentum-forbidden dark excitons. In addition to offering a tuning knob for light-matter interactions in two-dimensional materials, our results pave the way for designing ultrasensitive strain-sensing devices based on TMDs. |
en_US |
dc.language.iso |
en |
en_US |
dc.publisher |
American Physical Society |
en_US |
dc.subject |
Monolayer |
en_US |
dc.subject |
Phonons |
en_US |
dc.subject |
Photoluminescence |
en_US |
dc.subject |
Transitions |
en_US |
dc.subject |
Graphene |
en_US |
dc.subject |
Films |
en_US |
dc.subject |
Layer |
en_US |
dc.subject |
2024 |
en_US |
dc.subject |
2024-AUG-WEEK2 |
en_US |
dc.subject |
TOC-AUG-2024 |
en_US |
dc.title |
Brightening of dark excitons in WS2 via tensile strain-induced excitonic valley convergence |
en_US |
dc.type |
Article |
en_US |
dc.contributor.department |
Dept. of Chemistrey |
en_US |
dc.identifier.sourcetitle |
Physical Review B |
en_US |
dc.publication.originofpublisher |
Foreign |
en_US |