A Paper-Based Robust Hybrid Photodetector Based on the 2D/0D/0D MoS2/N-GQD/CsPbBr3 Triple Junction

Abstract

Flexible photodetectors (FPDs) are emerging as essential components for next-generation wearable optoelectronic devices, bendable imaging sensors, and implantable optoelectronics. However, the development of high-performance FPDs hinges on the identification of innovative material systems that combine excellent optoelectronic properties, efficient charge transport, and scalable processing techniques. In this study, these challenges by introducing a novel hybrid paper-based photodetector featuring a 2D MoS₂/N-doped Graphene Quantum Dot (N-GQD)/CsPbBr₃ quantum dot triple junction are addressed. This architecture is fabricated entirely through cost-effective and easily scalable solution-based methods, emphasizing the practicality of large-scale production. The incorporation of N-GQDs as an intermediate layer between MoS₂ nanoflowers and CsPbBr₃ QDs significantly enhances carrier transport and separation, leading to outstanding device performance. The materials and fabricated device are characterized by X-ray diffraction, Scanning Electron Microscopy, Transmission Electron Microscopy, UV–vis and Photoluminescence spectroscopy, and Ultra Violet photoelectron spectroscopy. The photodetector exhibits a remarkable responsivity of 0.458 A W−1 and a specific detectivity of 3.28 × 10¹¹ Jones, highlighting its potential for high-sensitivity applications. These results underscore the originality of the triple-junction design and its significance as a versatile, economical platform for advancing flexible and large-area photodetectors, paving the way for their deployment in wearable optoelectronics and expanded photo communication technologies.