Incorporation of MXene into all-inorganic halide double perovskite and its influence on resistive switching behaviour

Abstract

Mxene, a novel family of 2D materials, has gained significant attention due to its excellent properties like high electrical conductivity and mobility. Meanwhile, lead-free Cs2AgBiBr6 double perovskite (DP) has proved to be a magnificent active material for different optoelectronic applications. In our work, 2D Ti3C2Tx MXene is incorporated as an additive in Cs2AgBiBr6 DP to investigate its effects on the structural and optical properties of the DP. The pristine Cs2AgBiBr6 is synthesized using a one-step solution-processed method, and subsequently, Ti3C2Tx@Cs2AgBiBr6 composite is synthesized with different Ti3C2Tx additive concentrations, etched from its Ti3AlC2 MAX phase. The X-ray diffraction (XRD) pattern of the pure and Ti3C2Tx incorporated samples shows the typical face-centered cubic (FCC) structure of the Cs2AgBiBr6 DP crystal with change in average crystallite size at different Ti3C2Tx concentrations. The UV-vis-NIR absorption and Photoluminescence (PL) study is conducted to analyze the optical properties of the pristine and composites. The pristine Cs2AgBiBr6 DP shows an absorption edge at the visible regime with a band gap of 1.82 eV, while 2D Ti3C2Tx incorporation causes a slight shift in the absorption edge. Additionally, changes in the PL peak intensity of the DP specify the variation in its carrier recombination dynamics with different additive amounts. Furthermore, the resistive switching study of the DP shows that Ti3C2Tx incorporation improves the resistive switching performance by lowering the SET voltage in the fabricated memristive device. These structural and optical analyses of Ti3C2Tx @ Cs2AgBiBr6 composites and the improved resistive switching behaviour indicate its potential for future optoelectronic applications with optimized additive concentration.